Power Transistors
2SB0952
(2SB952)
, 2SB0952A
(2SB952A)
Silicon PNP epitaxial planar type
For low-voltage switching
Unit: mm
■
Features
•
Low collector-emitter saturation voltage V
CE(sat)
•
High-speed switching
•
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
10.0
±0.3
1.5
±0.1
8.5
±0.2
6.0
±0.2
3.4
±0.3
1.0
±0.1
4.4
±0.5
2.0
±0.5
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector-base voltage
(Emitter open)
2SB0952
2SB0952A
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
T
a
=
25°C
Junction temperature
Storage temperature
Symbol
V
CBO
Rating
−40
−50
−20
−40
−5
−7
−12
30
1.3
150
−55
to
+150
°C
°C
V
A
A
W
V
Unit
V
2.54
±0.3
1.4
±0.1
5.08
±0.5
1
2
3
0.8
±0.1
R = 0.5
R = 0.5
1.0
±0.1
0.4
±0.1
(8.5)
(6.0)
4.4
±0.5
0 to 0.4
Collector-emitter voltage 2SB0952
(Base open)
2SB0952A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
(6.5)
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter voltage
(Base open)
Collector-base cutoff
current (Emitter open)
2SB0952
2SB0952A
2SB0952
2SB0952A
I
EBO
h
FE1
h
FE2 *
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Turn-on time
Storage time
Fall time
2. *: Rank classification
Rank
h
FE2
R
60 to 120
Q
90 to 180
P
130 to 260
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
I
CBO
V
CB
= −40
V, I
E
=
0
V
CB
= −50
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −2
V, I
C
= −
0.1 A
V
CE
= −2
V, I
C
= −2
A
I
C
= −5
A, I
B
= −
0.16 A
I
C
= −5
A, I
B
= −
0.16 A
V
CE
= −10
V, I
C
= −
0.5 A, f
=
10 MHz
V
CB
= −10
V, I
E
= 0,
f
=
1 MHz
I
C
= −2
A
I
B1
= −66
mA, I
B2
=
66 mA
V
CC
= −20
V
150
140
0.1
0.5
0.1
45
60
260
−
0.6
−1.5
V
V
MHz
MHz
µs
µs
µs
Symbol
V
CEO
Conditions
I
C
= −10
mA, I
B
=
0
Min
−20
−40
−50
−50
−50
µA
µA
Typ
Max
Unit
V
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2003
SJD00031AED
(7.6)
(1.5)
1.3
14.4
±0.5
3.0
+0.4
–0.2
1.5
+0
–0.4
1
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and semiconductors described in this material
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if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
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(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
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Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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harm the human body.
•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
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2002 JUL
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