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BC637

Description
1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243
CategoryDiscrete semiconductor    The transistor   
File Size134KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BC637 Overview

1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243

BC637 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNXP
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)1 A
ConfigurationSingle
Minimum DC current gain (hFE)40
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.8 W
surface mountNO
BC637; BCP55; BCX55
60 V, 1 A NPN medium power transistors
Rev. 07 — 25 June 2007
Product data sheet
1. Product profile
1.1 General description
NPN medium power transistor series.
Table 1.
Product overview
Package
NXP
BC637
[2]
BCP55
BCX55
[1]
[2]
Type number
[1]
PNP complement
JEITA
SC-43A
SC-73
SC-62
JEDEC
TO-92
-
TO-243
BC638
BCP52
BCX52
SOT54
SOT223
SOT89
Valid for all available selection groups.
Also available in SOT54A and SOT54 variant packages (see
Section 2).
1.2 Features
I
High current
I
Two current gain selections
I
High power dissipation capability
1.3 Applications
I
I
I
I
Linear voltage regulators
Low-side switches
MOSFET drivers
Amplifiers
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
I
CM
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
DC current gain
h
FE
selection -10
h
FE
selection -16
single pulse; t
p
1 ms
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
Conditions
open base
Min
-
-
-
63
63
100
Typ
-
-
-
-
-
-
Max
60
1
1.5
250
160
250
Unit
V
A
A

BC637 Related Products

BC637 BCP55 BCX55
Description 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243
Is it Rohs certified? incompatible conform to conform to
package instruction , SC-73, 4 PIN PLASTIC, SC-62, 3 PIN
Reach Compliance Code unknow compli compli
Maximum collector current (IC) 1 A 1 A 1 A
Configuration Single SINGLE SINGLE
Minimum DC current gain (hFE) 40 40 25
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.8 W 1.5 W 1.25 W
surface mount NO YES YES
Maker NXP NXP -
Is it lead-free? - Lead free Lead free
Parts packaging code - SC-73 SOT-89
Contacts - 4 3
Shell connection - COLLECTOR COLLECTOR
Collector-emitter maximum voltage - 60 V 60 V
JESD-30 code - R-PDSO-G4 R-PSSO-F3
JESD-609 code - e3 e3
Humidity sensitivity level - 1 1
Number of components - 1 1
Number of terminals - 4 3
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - 260 260
Certification status - Not Qualified Not Qualified
Terminal surface - Tin (Sn) Tin (Sn)
Terminal form - GULL WING FLAT
Terminal location - DUAL SINGLE
Maximum time at peak reflow temperature - 30 30
transistor applications - SWITCHING AMPLIFIER
Transistor component materials - SILICON SILICON
Nominal transition frequency (fT) - 130 MHz 130 MHz
Base Number Matches - 1 1

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