BC847DS
45 V, 100 mA NPN/NPN general-purpose transistor
Rev. 01 — 25 August 2009
Product data sheet
1. Product profile
1.1 General description
NPN/NPN general-purpose transistor pair in a small SOT457 (SC-74) Surface-Mounted
Device (SMD) plastic package.
1.2 Features
I
I
I
I
I
I
Low collector capacitance
Low collector-emitter saturation voltage
Closely matched current gain
Reduces number of components and board space
No mutual interference between the transistors
AEC-Q101 qualified
1.3 Applications
I
General-purpose switching and amplification
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
V
CE
= 5 V; I
C
= 2 mA
Conditions
open base
Min
-
-
200
Typ
-
-
300
Max
45
100
450
Unit
V
mA
Per transistor
NXP Semiconductors
BC847DS
45 V, 100 mA NPN/NPN general-purpose transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
1
2
sym020
Simplified outline
6
5
4
Graphic symbol
6
5
4
TR2
1
2
3
TR1
3
3. Ordering information
Table 3.
Ordering information
Package
Name
BC847DS
SC-74
Description
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
Type number
4. Marking
Table 4.
BC847DS
Marking codes
Marking code
ZL
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
Per device
P
tot
total power dissipation
T
amb
≤
25
°C
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
Conditions
open emitter
open base
open collector
single pulse;
t
p
≤
1 ms
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
[1]
Min
-
-
-
-
-
-
-
-
Max
50
45
6
100
200
200
250
380
Unit
V
V
V
mA
mA
mA
mW
mW
Per transistor
BC847DS_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2009
2 of 12
NXP Semiconductors
BC847DS
45 V, 100 mA NPN/NPN general-purpose transistor
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
T
j
T
amb
T
stg
[1]
Parameter
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
−55
−65
Max
150
+150
+150
Unit
°C
°C
°C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
500
P
tot
(mW)
400
006aab621
300
200
100
0
−75
−25
25
75
125
175
T
amb
(°C)
FR4 PCB, standard footprint
Fig 1.
Per device: Power derating curve SOT457 (SC-74)
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
Per device
R
th(j-a)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
thermal resistance from
junction to ambient
in free air
[1]
Conditions
in free air
[1]
Min
-
-
Typ
-
-
Max
500
250
Unit
K/W
K/W
Per transistor
-
-
328
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
BC847DS_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2009
3 of 12
NXP Semiconductors
BC847DS
45 V, 100 mA NPN/NPN general-purpose transistor
10
3
Z
th(j-a)
(K/W)
10
2
δ
=1
0.75
0.50
0.33
0.20
0.10
0.05
0.02
10
0.01
0
006aab622
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
Per transistor
I
CBO
collector-base cut-off V
CB
= 30 V; I
E
= 0 A
current
V
CB
= 30 V; I
E
= 0 A;
T
j
= 150
°C
emitter-base cut-off
current
DC current gain
V
EB
= 6 V; I
C
= 0 A
V
CE
= 5 V
I
C
= 10
µA
I
C
= 2 mA
V
CEsat
V
BEsat
V
BE
collector-emitter
saturation voltage
base-emitter
saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 2 mA
I
C
= 10 mA
-
200
-
-
-
-
580
-
280
300
55
200
755
1000
650
-
-
450
100
300
850
-
700
770
mV
mV
mV
mV
mV
mV
-
-
-
-
-
-
15
5
100
nA
µA
nA
Conditions
Min
Typ
Max
Unit
I
EBO
h
FE
base-emitter voltage V
CE
= 5 V
BC847DS_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2009
4 of 12
NXP Semiconductors
BC847DS
45 V, 100 mA NPN/NPN general-purpose transistor
Table 7.
Characteristics
…continued
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
C
c
C
e
f
T
NF
Conditions
Min
-
-
100
-
Typ
1.9
11
-
1.9
Max
-
-
-
-
Unit
pF
pF
MHz
dB
collector capacitance V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
emitter capacitance
transition frequency
noise figure
V
EB
= 0.5 V; I
C
= i
c
= 0 A;
f = 1 MHz
V
CE
= 5 V; I
C
= 10 mA;
f = 100 MHz
V
CE
= 5 V; I
C
= 0.2 mA;
R
S
= 2 kΩ;
f = 10 Hz to 15.7 kHz
V
CE
= 5 V; I
C
= 0.2 mA;
R
S
= 2 kΩ; f = 1 kHz;
B = 200 Hz
-
3.1
-
dB
600
h
FE
006aaa533
0.20
I
C
(A)
0.16
006aaa532
I
B
(mA) = 4.50
4.05
3.60
3.15
2.70
2.25
1.80
1.35
0.90
400
(1)
0.12
(2)
0.08
200
(3)
0.45
0.04
0
10
−2
10
−1
1
10
10
2
10
3
I
C
(mA)
0
0
2
4
6
8
10
V
CE
(V)
V
CE
= 5 V
(1) T
amb
= 100
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−55 °C
T
amb
= 25
°C
Fig 3.
Per transistor: DC current gain as a function of
collector current; typical values
Fig 4.
Per transistor: Collector current as a function
of collector-emitter voltage; typical values
BC847DS_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2009
5 of 12
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