DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
BC868
NPN medium power transistor;
20 V, 1 A
Product data sheet
Supersedes data of 2003 Dec 02
2004 Nov 08
NXP Semiconductors
Product data sheet
NPN medium power transistor;
20 V, 1 A
FEATURES
•
High current
•
Two current gain selections
•
1.2 W total power dissipation.
APPLICATIONS
•
Linear voltage regulators
•
Low side switch
•
Supply line switch for negative voltages
•
MOSFET driver
•
Audio (pre-) amplifier.
DESCRIPTION
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
I
CM
h
FE
PARAMETER
collector-emitter
voltage
collector current (DC)
DC current gain
BC868
BC868-25
85
160
BC868
MIN. MAX. UNIT
−
−
20
1
2
375
375
V
A
A
−
−
peak collector current
−
NPN medium power transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
PHILIPS
BC868
BC868-25
SOT89
SOT89
EIAJ
SC-62
SC-62
CAC
CDC
MARKING CODE
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
TYPE NUMBER
BC868
2
3
1
sym042
SIMPLIFIED OUTLINE AND SYMBOL
PIN
1
2
3
DESCRIPTION
emitter
collector
base
3
2
1
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BC868
BC868-25
SC-62
DESCRIPTION
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
VERSION
SOT89
2004 Nov 08
2
NXP Semiconductors
Product data sheet
NPN medium power transistor;
20 V, 1 A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
T
amb
≤
25
°C
notes 1 and 2
notes 1 and 3
notes 1 and 4
T
stg
T
j
T
amb
Notes
1. Refer to SOT89 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint.
storage temperature
junction temperature
ambient temperature
−
−
−
−65
−
−65
0.5
0.85
1.2
+150
150
+150
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
MIN.
MAX.
32
20
5
1
2
200
BC868
UNIT
V
V
V
A
A
mA
W
W
W
°C
°C
°C
3. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
4. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
handbook, halfpage
1.6
MLE323
Ptot
(W)
1.2
(1)
(2)
0.8
(3)
0.4
0
-65
-5
55
115
175
Tamb (°C)
(1) FR4 PCB; 6 cm
2
mounting pad for collector.
(2) FR4 PCB; 1 cm
2
mounting pad for collector.
(3) Standard footprint.
Fig.1 Power derating curves.
2004 Nov 08
3
NXP Semiconductors
Product data sheet
NPN medium power transistor;
20 V, 1 A
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
T
amb
≤
25
°C
notes 1 and 2
notes 1 and 3
notes 1 and 4
R
th(j-s)
Notes
1. Refer to SOT89 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint.
thermal resistance from junction to solder point
T
amb
≤
25
°C
250
147
104
20
VALUE
BC868
UNIT
K/W
K/W
K/W
K/W
3. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
4. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
10
3
handbook, full pagewidth
Zth
(K/W)
10
2
(1)
(2)
(3)
(4)
(5)
(6)
MLE324
10
(7)
(8)
(9)
P
1
(10)
δ
=
tp
T
tp
T
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
tp (s)
10
3
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm
2
.
(1)
δ
= 1.
(2)
δ
= 0.75.
(3)
δ
= 0.5.
(4)
δ
= 0.33.
(5)
δ
= 0.2.
(6)
δ
= 0.1.
(7)
δ
= 0.05.
(8)
δ
= 0.02.
(9)
δ
=0.01.
(10)
δ
= 0.
Fig.2 Transient thermal impedance as a function of pulse time; typical values.
2004 Nov 08
4
NXP Semiconductors
Product data sheet
NPN medium power transistor;
20 V, 1 A
BC868
2 mm
handbook, halfpage
32 mm
2.8 mm
3.5 mm
10 mm
40 mm
10 mm
1.8 mm
1.1
mm
2.5 mm
1 mm
0.5 mm
0.7 mm
0.8 mm
3.7 mm
MLE321
5 mm
3.96 mm
1.6 mm
MLE322
Fig.3
SOT89 standard mounting conditions for
reflow soldering.
Fig.4
Printed-circuit board for SOT89; mounting
pad for collector 1 cm
2
.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
CONDITIONS
V
CB
= 25 V; I
E
= 0 A
V
CB
= 25 V; I
E
= 0 A; T
j
= 25
°C
V
EB
= 5 V; I
C
= 0 A
BC868
V
CE
= 10 V; I
C
= 5 mA
V
CE
= 1 V; I
C
= 500 mA
V
CE
= 1 V; I
C
= 1 A
h
FE
V
CEsat
V
BE
C
c
f
T
DC current gain
BC868-25
V
CE
= 1 V; I
C
= 500 mA
collector-emitter saturation voltage I
C
= 1 A; I
B
= 100 mA
base-emitter voltage
collector capacitance
transition frequency
V
CE
= 10 V; I
C
= 5 mA
V
CE
= 1 V; I
C
= 1 A
I
E
= i
e
= 0 A; V
CB
= 10 V;
f = 1 MHz
V
CE
= 5 V; I
C
= 50 mA;
f = 100 MHz
160
−
−
−
−
40
−
−
−
−
22
170
375
500
700
1
−
−
mV
mV
V
pF
MHz
50
85
60
−
−
−
−
375
−
MIN.
−
−
−
TYP.
−
−
−
MAX.
100
10
100
UNIT
nA
μA
nA
2004 Nov 08
5
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