EEWORLDEEWORLDEEWORLD

Part Number

Search

2SD946BQ

Description
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size111KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric Compare View All

2SD946BQ Overview

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN

2SD946BQ Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeSIP
package instructionROHS COMPLIANT, TO-126B-A1, 3 PIN
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationDARLINGTON WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)4000
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.2 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SD0946
(2SD946)
, 2SD0946A
(2SD946A)
,
2SD0946B
(2SD946B)
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
Features
Forward current transfer ratio h
FE
is designed high, which is appro-
priate to the driver circuit of motors and printer hammer.
A shunt resistor is omitted from the driver.
φ
3.16
±0.1
8.0
+0.5
–0.1
Unit: mm
3.2
±0.2
3.8
±0.3
11.0
±0.5
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage
(Emitter open)
2SD0946
2SD0946A
2SD0946B
Collector-emitter voltage 2SD0946
(Base open)
2SD0946A
2SD0946B
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
V
EBO
I
C
I
CP
P
C
T
j
T
stg
V
CEO
Symbol
V
CBO
Rating
30
60
100
25
50
80
5
1
1.5
1.2
150
−55
to
+150
V
A
A
W
°C
°C
B
1
2
3
0.75
±0.1
1.9
±0.1
Unit
V
0.5
±0.1
0.5
±0.1
2.3
±0.2
1.76
±0.1
V
4.6
±0.2
16.0
±1.0
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Internal Connection
C
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage
(Emitter open)
2SD0946
2SD0946A
2SD0946B
Collector-emitter voltage
(Base open)
2SD0946
2SD0946A
2SD0946B
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*1, 2
*1
200
E
Symbol
V
CBO
Conditions
I
C
=
100
µA,
I
E
=
0
Min
30
60
100
Typ
Max
3.05
±0.1
Unit
V
V
CEO
I
C
=
1 mA, I
B
=
0
25
50
80
V
V
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
I
E
=
100
µA,
I
C
=
0
V
CB
=
25 V, I
E
=
0
V
EB
=
4 V, I
C
=
0
V
CE
=
10 V, I
C
=
1 A
I
C
=
1 A, I
B
=
1 mA
I
C
=
1 A, I
B
=
1 mA
V
CB
=
10 V, I
E
= −50
mA, f
=
200 MHz
5
0.1
0.1
4 000
40 000
1.8
2.2
150
V
µA
µA
V
V
MHz
Collector-emitter saturation voltage
Base-emitter saturation voltage
*1
Transition frequency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE
Q
R
S
4 000 to 10 000 8 000 to 20 000 16 000 to 40 000
Note) The part numbers in the parenthesis show conventional part number.
Publication date: February 2004
SJD00164CED
1

2SD946BQ Related Products

2SD946BQ 2SD946BS 2SD946S 2SD946BR 2SD946AS
Description Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN Power Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN
Is it Rohs certified? conform to conform to conform to conform to conform to
Parts packaging code SIP SIP SIP SIP SIP
package instruction ROHS COMPLIANT, TO-126B-A1, 3 PIN ROHS COMPLIANT, TO-126B-A1, 3 PIN ROHS COMPLIANT, TO-126B-A1, 3 PIN ROHS COMPLIANT, TO-126B-A1, 3 PIN ROHS COMPLIANT, TO-126B-A1, 3 PIN
Contacts 3 3 3 3 3
Reach Compliance Code unknow unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 1 A 1 A 1 A 1 A 1 A
Collector-emitter maximum voltage 80 V 80 V 25 V 80 V 50 V
Configuration DARLINGTON WITH BUILT-IN RESISTOR DARLINGTON WITH BUILT-IN RESISTOR DARLINGTON WITH BUILT-IN RESISTOR DARLINGTON WITH BUILT-IN RESISTOR DARLINGTON WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 4000 16000 16000 8000 16000
JEDEC-95 code TO-126 TO-126 TO-126 TO-126 TO-126
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 1.2 W 1.2 W 1.2 W 1.2 W 1.2 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz
Base Number Matches 1 1 1 1 1
Zigbee sends the terminal address to the coordinator
I am a newbie and just started learning zigbee. I am currently working on indoor temperature and humidity display, which is the simplest series. There are two terminals sending data to the coordinator...
小东西 RF/Wirelessly
TI and ST ZigBee module networking performance test
[align=left][color=#000000]Some time ago, I received a project to monitor [font=Calibri]XX[/font] data in a certain scenic area in Hangzhou. Since the area is relatively large, there are more than [fo...
MaggicZ Integrated technical exchanges
Please tell me the chip pin distribution and function of TMS320C5509
I am a novice, please tell me the chip pin distribution and function of TMS320C5509 and the pin distribution of EPM570...
yanfengzhu Embedded System
LM3S811 Learning Experience 5--GPIO Output Program Flow
Program flow of GPIO output:1) Clock initialization (set LDO output voltage, set system clock; 2) Enable the corresponding peripherals (GPIO); 3) Set the input and output type of each bit of the GPIO ...
qwertyuiop11111 Microcontroller MCU
I am looking for a unidirectional conducting element with a minimum conduction voltage drop. Please help me provide some solutions.
[i=s] This post was last edited by dontium on 2015-1-23 12:58 [/i] I am looking for a unidirectional conduction component with a minimum conduction voltage drop. Please help me with some solutions....
Cybrog Analogue and Mixed Signal
Traffic Statistics Solution
Please help me with the traffic statistics solution. Thank you very much....
sunzhaojie Embedded System

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1576  375  1217  2548  838  32  8  25  52  17 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号