KM416V254BJ-6 datasheet, PDF - EEWORLD Datasheet

KM416V254BJ-6: DescriptionEDO DRAM, 256KX16, 60ns, CMOS, PDSO40, SOJ-40; Categorystorage storage; File Size50KB，1 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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KM416V254BJ-6 Overview

EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, SOJ-40

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	SOJ
package instruction	SOJ-40
Contacts	40
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST PAGE WITH EDO
Maximum access time	60 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	COMMON
JESD-30 code	R-PDSO-J40
JESD-609 code	e0
length	26.04 mm
memory density	4194304 bit
Memory IC Type	EDO DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	40
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOJ
Encapsulate equivalent code	SOJ40,.44
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	512
Maximum seat height	3.76 mm
self refresh	NO
Maximum standby current	0.0005 A
Maximum slew rate	0.07 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10.16 mm

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