SSS4N70 datasheet, PDF - EEWORLD Datasheet

SSS4N70: DescriptionPower Field-Effect Transistor, 2.3A I(D), 700V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size30KB，1 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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SSS4N70 Overview

Power Field-Effect Transistor, 2.3A I(D), 700V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Parameter Name	Attribute value
Maker	SAMSUNG
Parts packaging code	SFM
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknown
Shell connection	ISOLATED
Configuration	SINGLE
Minimum drain-source breakdown voltage	700 V
Maximum drain current (Abs) (ID)	2.3 A
Maximum drain current (ID)	2.3 A
Maximum drain-source on-resistance	3.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	40 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Transistor component materials	SILICON

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