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ML4310-30

Description
K BAND, 0.5pF, 25V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
CategoryDiscrete semiconductor    diode   
File Size144KB,6 Pages
ManufacturerTE Connectivity
Websitehttp://www.te.com
Download Datasheet Parametric View All

ML4310-30 Overview

K BAND, 0.5pF, 25V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE

ML4310-30 Parametric

Parameter NameAttribute value
MakerTE Connectivity
package instructionO-CEMW-N2
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage25 V
ConfigurationSINGLE
Nominal diode capacitance0.5 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandK BAND
JESD-30 codeO-CEMW-N2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formMICROWAVE
Certification statusNot Qualified
minimum quality factor5500
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Varactor Diode ClassificationABRUPT
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