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MMBZ5256B

Description
Zener Diode,
CategoryDiscrete semiconductor    diode   
File Size106KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance  
Download Datasheet Parametric View All

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MMBZ5256B Overview

Zener Diode,

MMBZ5256B Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
package instructionR-PDSO-G3
Reach Compliance Codecompliant
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.35 W
GuidelineTS 16949
Nominal reference voltage30 V
surface mountYES
technologyZENER
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5%
Working test current4.2 mA
Certificate TH97/10561QM
Certificate TW00/17276EM
MMBZ5221B ~ MMBZ5261B
SILICON PLANAR ZENER DIODE
SOT-23
1.40
0.95
0.50
0.35
3.10
2.70
3
1
2
1.65
1.20
1.02
0.89
3.00
2.20
0.100
0.013
FEATURES :
* Zener Breakdown Voltage Range 2.4 V to 47 V
* Package Designed for Optimal Automated
Board Assembly
* Small Package Size for High Density Applications
* Pb / RoHS Free
0.19
0.08
2.04
1.78
MECHANICAL DATA :
* Case : SOT-23 plastic Case
1
3
bottom view
2
Dimensions in millimeters
Absolute Maximum Ratings
RATING
Power Dissipation
( Ta = 25 °C )
SYMBOL
P
D
R
ӨJA
T
J
T
STG
VALUE
350
417
150
- 55 to + 150
UNIT
mW
°C/W
°C
°C
Thermal Resistance, Jucntion to Ambient Air
Junction Temperature
Storage Temperature Range
Page 1 of 2
Rev. 00 : March 22, 2007

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