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MGS907

Description
Mixer Diode, Millimeter Wave Band, Gallium Arsenide, BEAM LEAD PACKAGE-4
CategoryDiscrete semiconductor    diode   
File Size945KB,4 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Download Datasheet Parametric View All

MGS907 Overview

Mixer Diode, Millimeter Wave Band, Gallium Arsenide, BEAM LEAD PACKAGE-4

MGS907 Parametric

Parameter NameAttribute value
MakerMACOM
package instructionR-XQMW-F4
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationRING, 8 ELEMENTS
Maximum diode capacitance0.04 pF
Diode component materialsGALLIUM ARSENIDE
Diode typeMIXER DIODE
frequency bandMILLIMETER WAVE BAND
JESD-30 codeR-XQMW-F4
Number of components8
Number of terminals4
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formMICROWAVE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.075 W
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
MGS800/900 Series
GaAs Schottky Diodes
Description
The Aeroflex / Metelics MGS Series of GaAs Schottky diodes
are designed for optimum performance in millimeter wave
components operating to 60 GHz.
Features
Fourteen different configurations
Beam lead, Flip Chip or packaged devices
Hi-Rel screening per MIL-PRF-19500
and MIL-PRF-38534 available
Absolute Maximum Ratings
Parameters
Reverse Voltage
Forward Current
Operation Temperature
Storage Temperature
DC Power Dissipation
Soldering Temperature (Packaged)
Beam Lead Pull Strength, Min
Rated V
BR
50 mA
-65 ºC to +150 ºC
-65 ºC to +150 ºC
75 mW per junction at T
A
= 25 ºC,
derate linearly to zero at T
A
= +150 ºC
+260 ºC for 5 sec per JEDEC J-STD-20C
6 grams
Rating
Revision Date:Revision Date: 8/18/2012
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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