E2G0021-17-41
¡ Semiconductor
MSM512805C
¡ Semiconductor
This version: Jan. 1998
MSM512805C
Previous version: May 1997
262,144-Word
¥
8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
DESCRIPTION
The MSM512805C is a 262,144-word
¥
8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MSM512805C achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer
metal CMOS process. The MSM512805C is available in a 26/24-pin plastic SOJ or 26/24-pin plastic
TSOP.
FEATURES
• 262,144-word
¥
8-bit configuration
• Single 5 V power supply,
±5%
tolerance
• Input
: TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 512 cycles/8 ms
• Fast page mode with EDO, read modify write capability
•
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
• Package options:
26/24-pin 300 mil plastic SOJ (SOJ26/24-P-300-1.27)
(Product : MSM512805C-xxJS)
26/24-pin 300 mil plastic TSOP (TSOPII26/24-P-300-1.27-K) (Product : MSM512805C-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM512805C-40
MSM512805C-45
MSM512805C-50
Access Time (Max.)
t
RAC
t
AA
t
CAC
t
OEA
40 ns 20 ns 10 ns 10 ns
45 ns 24 ns 14 ns 14 ns
50 ns 26 ns 14 ns 14 ns
Cycle Time
Power Dissipation
(Min.)
Operating (Max.) Standby (Max.)
80 ns
90 ns
100 ns
735 mW
682.5 mW
630 mW
5.25 mW
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¡ Semiconductor
MSM512805C
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
T
I
OS
P
D
*
T
opr
T
stg
Rating
–1.0 to 7.0
50
1
0 to 70
–55 to 150
Unit
V
mA
W
°C
°C
*: Ta = 25°C
Recommended Operating Conditions
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
4.75
0
2.4
–1.0
Typ.
5.0
0
—
—
Max.
5.25
0
6.5
0.8
(Ta = 0°C to 70°C)
Unit
V
V
V
V
Capacitance
Parameter
Input Capacitance (A0 - A8)
Input Capacitance (RAS,
CAS, WE, OE)
Output Capacitance (DQ1 - DQ8)
Symbol
C
IN1
C
IN2
C
I/O
Typ.
—
—
—
(V
CC
= 5 V ±5%, Ta = 25°C, f = 1 MHz)
Max.
6
7
7
Unit
pF
pF
pF
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¡ Semiconductor
DC Characteristics
MSM512805C
(V
CC
= 5 V ±5%, Ta = 0°C to 70°C)
Condition
MSM512805 MSM512805 MSM512805
C-45
C-40
C-50
Unit Note
Min.
Max.
V
CC
0.4
10
Min.
2.4
0
–10
Max.
V
CC
0.4
10
Min.
2.4
0
–10
Max.
V
CC
0.4
10
V
V
mA
2.4
0
–10
Parameter
Output High Voltage
Output Low Voltage
Input Leakage Current
Symbol
V
OH
I
OH
= –5.0 mA
V
OL
I
OL
= 4.2 mA
0 V
£
V
I
£
6.5 V;
I
LI
All other pins not
under test = 0 V
DQ disable
0 V
£
V
O
£
5.25 V
RAS, CAS
cycling,
t
RC
= Min.
RAS, CAS
= V
IH
I
CC2
RAS, CAS
≥
V
CC
–0.2 V
RAS
cycling,
I
CC3
CAS
= V
IH
,
t
RC
= Min.
RAS
= V
IH
,
I
CC5
CAS
= V
IL
,
DQ = enable
I
CC6
RAS
cycling,
CAS
before
RAS
RAS
= V
IL
,
I
CC7
CAS
cycling,
t
HPC
= Min.
Output Leakage Current
Average Power
Supply Current
(Operating)
Power Supply
Current (Standby)
Average Power
Supply Current
(RAS-only Refresh)
Power Supply
Current (Standby)
Average Power
Supply Current
(CAS before
RAS
Refresh)
Average Power
Supply Current
(Fast Page Mode)
I
LO
–10
10
–10
10
–10
10
mA
I
CC1
—
—
—
140
2
1
—
—
—
130
2
1
—
—
—
120
2
1
mA 1, 2
mA
1
—
140
—
130
—
120
mA 1, 2
—
5
—
5
—
5
mA
1
—
140
—
130
—
120
mA 1, 2
—
110
—
100
—
90
mA 1, 3
Notes : 1. I
CC
Max. is specified as I
CC
for output open condition.
2. The address can be changed once or less while
RAS
= V
IL
.
3. The address can be changed once or less while
CAS
= V
IH
.
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