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BCM847BV

Description
100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size103KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

BCM847BV Overview

100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR

BCM847BV Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
package instructionPLASTIC PACKAGE-6
Contacts6
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-F6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
BCM847BV; BCM847BS;
BCM847DS
NPN/NPN matched double transistors
Rev. 06 — 28 August 2009
Product data sheet
1. Product profile
1.1 General description
NPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plastic
packages. The transistors are fully isolated internally.
Table 1.
Product overview
Package
NXP
BCM847BV
BCM847BS
BCM847DS
SOT666
SOT363
SOT457
JEITA
-
SC-88
SC-74
PNP/PNP
complement
BCM857BV
BCM857BS
BCM857DS
Matched version of
BC847BV
BC847BS
-
Type number
1.2 Features
I
Current gain matching
I
Base-emitter voltage matching
I
Drop-in replacement for standard double transistors
1.3 Applications
I
Current mirror
I
Differential amplifier
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
V
CE
= 5 V;
I
C
= 2 mA
Conditions
open base
Min
-
-
200
Typ
-
-
290
Max
45
100
450
Unit
V
mA
Per transistor

BCM847BV Related Products

BCM847BV BCM847BS BCM847DS
Description 100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
Is it Rohs certified? conform to conform to conform to
Maker NXP NXP NXP
package instruction PLASTIC PACKAGE-6 PLASTIC, SC-88, 6 PIN PLASTIC, SC-74, TSOP-6
Contacts 6 6 6
Reach Compliance Code compli compli compli
ECCN code EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 45 V 45 V 45 V
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE) 200 200 200
JESD-30 code R-PDSO-F6 R-PDSO-G6 R-PDSO-G6
JESD-609 code e3 e3 e3
Humidity sensitivity level 1 1 1
Number of components 2 2 2
Number of terminals 6 6 6
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.2 W 0.3 W 0.38 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form FLAT GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 30 30 30
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz
Parts packaging code - SC-88 TSOP

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