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BCV72

Description
RF SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size53KB,6 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BCV72 Overview

RF SMALL SIGNAL TRANSISTOR

BCV72 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOT-23
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.25 V
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
BCV71; BCV72
NPN general purpose transistors
Product data sheet
Supersedes data of 1997 Mar 11
1999 Apr 08

BCV72 Related Products

BCV72 BCV71
Description RF SMALL SIGNAL TRANSISTOR 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker NXP NXP
Parts packaging code SOT-23 SOT-23
package instruction PLASTIC PACKAGE-3 PLASTIC PACKAGE-3
Contacts 3 3
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A
Collector-emitter maximum voltage 60 V 60 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 200 110
JEDEC-95 code TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.3 W 0.3 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 30 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz
VCEsat-Max 0.25 V 0.25 V

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