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BCW60D

Description
RF SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size55KB,6 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BCW60D Overview

RF SMALL SIGNAL TRANSISTOR

BCW60D Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNXP
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)380
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)125 MHz
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
BCW60 series
NPN general purpose transistors
Product data sheet
Supersedes data of 1997 Mar 10
1999 Apr 22

BCW60D Related Products

BCW60D BCW60B BCW60C BCW60
Description RF SMALL SIGNAL TRANSISTOR 100 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 100 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 100 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
surface mount YES YES YES Yes
Is it Rohs certified? incompatible incompatible incompatible -
Reach Compliance Code unknow unknow unknow -
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A -
Configuration Single Single Single -
Minimum DC current gain (hFE) 380 175 250 -
JESD-609 code e0 e0 e0 -
Maximum operating temperature 150 °C 150 °C 150 °C -
Polarity/channel type NPN NPN NPN -
Maximum power dissipation(Abs) 0.3 W 0.3 W 0.3 W -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
Nominal transition frequency (fT) 125 MHz 125 MHz 125 MHz -

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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