Secondary Variable Output LDO Regulator Series for Local Power Supplies
1A Secondary Variable Output
LDO Regulators for Local Power Supplies
BD00GC0WEFJ
No.10026EAT08
●Description
BD00GC0WEFJ is a LDO regulator with output current 1.0A. The output accuracy is ±1% of output voltage. With
external resistance, it is available to set the output voltage at random (from 1.5V to 13.0V) and also provides output
voltage fixed type without external resistance. It is used for the wide applications of digital appliances. It has package
type: HTSOP-J8. Over current protection (for protecting the IC destruction by output short circuit), circuit current
ON/OFF switch (for setting the circuit 0μA at shutdown mode), and thermal shutdown circuit (for protecting IC from heat
destruction by over load condition) are all built in. It is usable for ceramic capacitor and enables to improve smaller set
and long-life.
●Features
1) Output current 1.0A
2) High accuracy reference voltage circuit
3) Built-in Over Current Protection circuit (OCP)
4) Built-in Thermal Shut Down circuit (TSD)
5) With shut down switch
6) Output voltage variable type (1.5V to 13.0V)
7) Package: HTSOP-J8
●Output
voltage differential Line up
Product name
BD00GC0WEFJ
Variable
○
Package
HTSOP-J8
Product name :
BD00GC0WEFJ
a b c d
Signal
a
00
Voltage resistance(V)
b
E
F
G
A1
A3
A5
“W”
“ ”
e
EFJ
24V
20V
15V
Output current (A)
c
0.1A
0.3A
0.5A
Shutdown switch
d
Shutdown switch is built in
Shutdown switch is not built in
Package
HTSOP-J8
C0
C5
D0
1.0A
1.5A
2.0A
H
I
10V
7V
e
Description
Output voltage (V)
Variable
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© 2010 ROHM Co., Ltd. All rights reserved.
1/11
2010.04 - Rev.A
BD00GC0WEFJ
●Absolute
Maximum Ratings (Ta=25℃)
Parameter
Power supply voltage
EN voltage
Output voltage
Feedback voltage
Power dissipation
HTSOP-J8
Operating Temperature Range
Storage Temperature Range
Junction Temperature
Symbol
Vcc
V
EN
V
OUT
V
FB
Pd
*2
Topr
Tstg
Tjmax
Limits
15.0 *
1
15.0
15.0
15.0
2110
*2
-25½+85
-55½+150
+150
Unit
V
V
V
V
mW
℃
℃
℃
Technical Note
*1 Not to exceed Pd
*2 Reduced by 16.9mW/℃ for each increase in Ta of 1℃ over 25℃. (when mounted on a board 70mm×70mm×1.6mm glass-epoxy board, two layer)
●Operating
conditions (Ta=25℃)
Parameter
Input power supply voltage
EN voltage
Output voltage setting range
Output current
Symbol
Vcc
V
EN
Vo
Io
Min.
4.5
0.0
1.5
0.0
Max.
14.0
14.0
13.0
1.0
Unit
V
V
V
A
This product should not be used in a radioactive environment.
●Electrical
Characteristics
(Unless otherwise noted, Ta=25℃, EN=3V, Vcc=6V, R
1
=43kΩ, R
2
=8.2kΩ)
Parameter
Symbol
Min.
Typ.
Max.
Circuit current at shutdown mode
Isd
-
0
5
Bias current
Icc
-
600
900
Line regulation
Reg.I
-
25
50
Load regulation
Reg Io
-
25
75
Minimun dropout Voltage
Vco
-
0.6
0.92
Output reference voltage
V
FB
0.792
0.800
0.808
EN Low voltage
V
EN
(Low)
0
-
0.8
EN High voltage
V
EN
(High)
2.4
-
14.0
EN Bias current
IEN
1
3
9
Unit
μA
μA
mV
mV
V
V
V
V
μA
Conditions
EN=0V, OFF mode
Vcc=( Vo+0.92V )→14.0V
Io=0→1.0A
Vcc=5V,Io=1.0A
Io=0mA
●I/O
Equivalent circuits
8pin(VCC) / 1pin(VO)
8pin(Vcc)
2pin(FB)
2pin(FB)
5pin(EN)
Vcc
Vcc
1pin(Vo)
5pin(EN)
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© 2010 ROHM Co., Ltd. All rights reserved.
2/11
2010.04 - Rev.A
BD00GC0WEFJ
●Reference
Data (Unless otherwise noted, Ta=25℃, EN=3V, Vcc=6V, R
1
=43kΩ, R
2
=8.2kΩ)
Technical Note
EN
Vo
50mV/div
2V/div
Vo
50mV/div
Vcc
2V/div
Io
1A/div
Io
1A/div
Vo
2V/div
10usec/div
10usec/div
1½sec/div
Fig.1 Transient Response
(0→1.0A)
Co=1μF
EN
2V/div
EN
2V/div
Fig.2 Transient Response
(1.0→0A)
Co=1μF
EN
2V/div
Fig.3 Input sequence 1
Co=1μF
Vcc
2V/div
Vcc
2V/div
Vcc
2V/div
Vo
2V/div
Vo
2V/div
Vo
2V/div
40msec/div
1½sec/div
40msec/div
Fig.4 OFF sequence 1
Co=1μF
5.2
800
Fig.5 Inpurt sequence 2
Co=1μF
1.0
Fig.6 OFF sequence 2
Co=1μF
5.1
0.8
700
5.0
600
Icc [uA]
0.6
Vo [V]
Ic c [u A]
0.4
4.9
500
0.2
4.8
-25
0
25
Ta [℃]
50
75
85
400
-25
0
25
Ta [℃]
50
75
85
0.0
-25
0
25
Ta [℃]
50
75
85
Fig.7 Ta-Vo (Io=0mA)
8.0
Fig.8 Ta-Icc
5.2
5.0
Fig.9 Ta-Isd
(V
EN
=0V)
6.0
5.1
4.0
Ien [μA]
3.0
4.0
5.0
Isd [μA]
Vo [V]
2.0
2.0
4.9
1.0
0.0
-25
0
25
Ta [
℃
]
50
75
85
4.8
0
0.2
0.4
Io [A]
0.6
0.8
1
0.0
0
3
6
Vcc [V]
9
12
14
Fig.10 Ta-IEN
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© 2010 ROHM Co., Ltd. All rights reserved.
Fig.11 Io-Vo
Fig.12 Vcc-Isd
(V
EN
=0V)
3/11
2010.04 - Rev.A
BD00GC0WEFJ
●Reference
Data
6
Technical Note
6.0
6
5
4
Vo [V]
4.0
Vo [V]
Vo 〔V〕
4
3
2
1
2
2.0
0
0
3
6
Vcc [V]
9
12
14
0.0
100
120
140
160
180
200
Ta [℃]
0
0
0.5
1
1.5
2
2.5
Io 〔A〕
Fig.13 Vcc-Vo (Io=0mA)
0.7
10.00
Fig.14 TSD (Io=0mA)
900
Fig.15 OCP
800
0.6
1.00
Vdrop [V]
ESR [Ω]
0.5
Icc [μA]
]
Safety Area
0.10
700
600
0.4
500
0.3
-25
0
25
Ta [℃]
50
75
0.01
0
0.2
0.4
0.6
Io [A]
0.8
1
85
400
0
0.2
0.4
0.6
0.8
1
Io [A]
Fig.16 Minimum dropout Voltage 1
（Vcc=5V、Io=-1.0A）
100
80
Fig.17 ESR condencer
Fig.19 ESR
コンデンサ
0.6
0.5
Fig.18 Io-Icc
0.6
0.5
0.4
Vdrop[V]
0.4
PSRR [dB]
V
drop[
V]
60
40
20
0
0.1
1
10
100
Frequency[KH½]
周波数 [kHz]
0.3
0.3
0.2
0.1
0
0
0.2
0.4
0.6
0.8
1
Io[A]
0.2
0.1
0
0
0.2
0.4
Io[A]
0.6
0.8
1
Fig.19 PSRR(Io=0mA)
Fig.20 Minimum dropout Voltage 2
（Vcc=4.5V、Ta=25℃）
Fig.21 Minimum dropout Voltage 3
（Vcc=6V、Ta=25℃）
0.6
0.5
0.4
Vdrop[V]
0.6
0.5
0.4
Vdrop[V]
0.6
0.5
0.4
Vr p ]
d o [V
0.3
0.2
0.1
0
0
0.2
0.4
Io[A]
0.3
0.3
0.2
0.1
0.2
0.1
0
0.6
0.8
1
0
0.2
0.4
Io[A]
0.6
0.8
1
0
0
0.2
0.4
0.6
0.8
1
Io[A]
Fig.22 Minimum dropout Voltage 4
（Vcc=8V、Ta=25℃）
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Fig.23 Minimum dropout Voltage 5
（Vcc=10V、Ta=25℃）
Fig.24 Minimum dropout Voltage 6
（Vcc=12V、Ta=25℃）
4/11
2010.04 - Rev.A
BD00GC0WEFJ
●Heat
Dissipation Characteristics
◎HTSOP-J8
Technical Note
Measure condition: mounted on a ROHM board, and IC
4.0
Power Dissipation :Pd [W]
許容損失:Pd
[W]
⑤3.76W
3.0
④2.11W
Substrate size: 70mm
×
70mm
×
1.6mm
(Substrate with thermal via)
・Solder
the substrate and package reverse exposure heat
radiation part
①
IC only
θj-a=249.5℃/W
②
1-layer（copper foil are :0mm×0mm）
θj-a=153.2℃/W
③
2-layer（copper foil are :15mm×15mm）
θj-a=113.6℃/W
④
2-layer（copper foil are :70mm×70mm）
θj-a=59.2℃/W
⑤
4-layer（copper foil are :70mm×70mm）
θj-a=33.3℃/W
2.0
1.0
0
③1.10W
②0.82W
①0.50W
0
25
50
75
100
125
150
周囲温度:Ta
[℃]
Ambient Temperature :Ta [℃]
●About
Input-to-output capacitor
It is recommended that a capacitor is placed nearby pin between Input pin and GND, output pin and GND.
A capacitor, between input pin and GND, is valid when the power supply impedance is high or drawing is long. Also as for a
capacitor, between output pin and GND, the greater the capacity, more sustainable the line regulation and it makes improvement
of characteristics by load change. However, please check by mounted on a board for the actual application. Ceramic capacitor
usually has difference, thermal characteristics and series bias characteristics, and moreover capacity decreases gradually by
using conditions.
For more detail, please be sure to inquire the manufacturer, and select the best ceramic capacitor.
Ceramic capacitor capacity- DC bias characteristics
(Characteristics example)
10 Voltage resistance
10
0
-10
Capacitance Change [%]
-20
-30
10 Voltage resistance
10 Voltage resistance
B characteristics
B1 characteristics
GRM188B11A105KA61D
6.3 Voltage resistance
B characteristics
-40
-50
-60
-70
-80
-90
-100
0
1
F characteristics
4 Voltage resistance
10 Voltage Resistance
F characteristics
X6S characteristics
2
DC Bias Voltage [V]
3
4
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© 2010 ROHM Co., Ltd. All rights reserved.
5/11
2010.04 - Rev.A
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