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BYM26E/31113

Description
DIODE 2.3 A, 1000 V, SILICON, RECTIFIER DIODE, Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size294KB,10 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BYM26E/31113 Overview

DIODE 2.3 A, 1000 V, SILICON, RECTIFIER DIODE, Rectifier Diode

BYM26E/31113 Parametric

Parameter NameAttribute value
MakerNXP
package instructionO-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationFAST SOFT RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)2.65 V
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak forward current45 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current2.3 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
Maximum reverse current10 µA
Maximum reverse recovery time0.075 µs
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
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