BB809113 datasheet, PDF - EEWORLD Datasheet

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BB809113: DescriptionDIODE VHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode; CategoryDiscrete semiconductor diode; File Size62KB，2 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BB809113 Overview

DIODE VHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode

BB809113 Parametric

Parameter Name	Attribute value
Maker	NXP
package instruction	O-LALF-W2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	3% MATCHED SETS AVAILABLE
Minimum breakdown voltage	30 V
Shell connection	ISOLATED
Configuration	SINGLE
Minimum diode capacitance ratio	8
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
frequency band	VERY HIGH FREQUENCY
JEDEC-95 code	DO-34
JESD-30 code	O-LALF-W2
Number of components	1
Number of terminals	2
Maximum operating temperature	100 °C
Minimum operating temperature	-55 °C
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Maximum reverse current	0.01 µA
Reverse test voltage	28 V
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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BB809113 Related Products

	BB809113	BB809153	BB809116	BB809143	BB809136	BB809133
Description	DIODE VHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode	DIODE VHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode	DIODE VHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode	DIODE VHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode	DIODE VHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode	DIODE VHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode
package instruction	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	3% MATCHED SETS AVAILABLE	3% MATCHED SETS AVAILABLE	3% MATCHED SETS AVAILABLE	3% MATCHED SETS AVAILABLE	3% MATCHED SETS AVAILABLE	3% MATCHED SETS AVAILABLE
Minimum breakdown voltage	30 V	30 V	30 V	30 V	30 V	30 V
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum diode capacitance ratio	8	8	8	8	8	8
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE
frequency band	VERY HIGH FREQUENCY	VERY HIGH FREQUENCY	VERY HIGH FREQUENCY	VERY HIGH FREQUENCY	VERY HIGH FREQUENCY	VERY HIGH FREQUENCY
JEDEC-95 code	DO-34	DO-34	DO-34	DO-34	DO-34	DO-34
JESD-30 code	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
Number of components	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Maximum operating temperature	100 °C	100 °C	100 °C	100 °C	100 °C	100 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Package body material	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum reverse current	0.01 µA	0.01 µA	0.01 µA	0.01 µA	0.01 µA	0.01 µA
Reverse test voltage	28 V	28 V	28 V	28 V	28 V	28 V
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Maker	NXP	NXP	-	NXP	NXP	NXP

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