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Structure
Product
Type
Feature
Silicon monolithic integrated circuit
Power management switch IC
BD2200GUL
Single channel of low on resistance (Typ = 100mΩ) N-channel MOSFET built in
Reverse-current protection when power switch off
Output discharge circuit
（Under
operating conditions）
◇Absolute
maximum ratings (Ta=25℃)
Parameter
Supply voltage
VIN voltage
EN voltage
VOUT voltage
Storage temperature
Power dissipation
Symbol
V
DD
V
IN
V
EN
V
OUT
T
STG
Pd
Rating
-0.3
½
6.0
-0.3
½
6.0
-0.3
½
V
DD
+ 0.3
-0.3
½
6.0
-55
½
150
575
*1
Unit
V
V
V
V
℃
mW
*1 Mounted on 50mm * 58mm * 1.75mm glass-epoxy PCB.
Derating: 4.6mW/℃ above Ta = 25℃.
* This product is not designed for protection against radioactive rays.
◇Operating
conditions
Parameter
Switch input voltage
Operating temperature
Output current
Symbol
V
IN
T
OPR
I
LO
MIN
2.7
-25
0
TYP
3.3
25
-
MAX
5.5
85
500
Unit
V
°C
mA
REV. B
2/4
◇Electric
characteristics (Unless otherwise specified, V
IN
= 3.3V, Ta = 25°C )
Limits
Parameter
Symbol
MIN
Operating current
Standby current
I
DD
I
STB
V
ENH
EN input voltage
V
ENL
EN input current
ON resistance
Switch leakage current
Output turn on rise time
Output turn on time
Output turn off fall time
Output turn off time
Discharge ON resistance
Discharge current
I
EN
R
ON
I
LEAK
T
ON1
T
ON2
T
OFF1
T
OFF2
R
DISC
I
DISC
-
-1.0
-
-
-
-
-
-
-
-
-
-
100
0.01
1.0
1.2
2.5
4.5
70
15
0.4
1.0
200
1
2.0
2.4
5
9
110
20
V
μA
mΩ
μA
ms
ms
μs
μs
Ω
mA
Low level input
V
EN
= 0V or V
EN
= 1.2V
I
OUT
= 500mA
V
EN
= 0V, V
OUT
= 0V
RL = 10Ω
V
OUT
:10%
→
90%
RL = 10Ω
V
EN
High
→
V
OUT
90%
RL = 10Ω
V
OUT
:90%
→
10%
RL = 10Ω
V
EN
Low
→
V
OUT
10%
I
OUT
= -1mA, V
EN
= 0V
V
OUT
= 3.3V, V
EN
= 0V
-
-
1.2
TYP
20
0.01
-
MAX
30
1
-
μA
μA
V
V
EN
= 1.2V
V
EN
= 0V
High level input
Unit
Condition
◇
Switch output turn ON/OFF timing
◇
Test circuit
V
EN
50%
50%
VIN
VIN
VIN
VOUT
VOUT
GND
C
L
R
L
T
ON2
T
OFF2
90%
V
OUT
90%
VEN
EN
10%
T
ON1
10%
T
OFF1
REV. B
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◇Block
diagram
◇Pin
number, Pin name
PIN number
Pin Name
GND
VOUT
VIN
EN
Description
Ground
Switch output
Switch input
Enable input
VIN
VOUT
A3
B2, B3
A1, B1
charge
pump
GND
EN
A2
◇Package
outline
A B A
Lot No.
VCSP50L1 (Unit: mm)
REV. B
4/4
○Cautions
on use
(1) Absolute Maximum Ratings
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc.,
can break down devices, thus making impossible to identify breaking mode such as a short circuit or an open circuit. If
any special mode exceeding the absolute maximum ratings is assumed, consideration should be given to take physical
safety measures including the use of fuses, etc.
(2) Power supply and GND line
Design PCB pattern to provide low impedance for the wiring between the power supply and the GND lines. Pay
attention to the interference by common impedance of layout pattern when there are plural power supplies and
GND lines. Especially, when there are GND pattern for small signal and GND pattern for large current included the
external circuits, separate each GND pattern. Furthermore, for all power supply terminals to ICs, mount a capacitor
between the power supply and the GND terminal. At the same time, in order to use a capacitor, thoroughly check to be
sure the characteristics of the capacitor to be used present no problem including the occurrence of capacity dropout at a
low temperature, thus determining the constant.
(3) GND voltage
Make setting of the potential of the GND terminal so that it will be maintained at the minimum in any operating
state. Furthermore, check to be sure no terminals are at a potential lower than the GND voltage including an
actual electric transient.
(4) Short circuit between terminals and erroneous mounting
In order to mount ICs on a set PCB, pay thorough attention to the direction and offset of the ICs. Erroneous
mounting can break down the ICs. Furthermore, if a short circuit occurs due to foreign matters entering between
terminals or between the terminal and the power supply or the GND terminal, the ICs can break down.
(5) Operation in strong electromagnetic field
Be noted that using ICs in the strong electromagnetic field can malfunction them.
(6) Input terminals
In terms of the construction of IC, parasitic elements are inevitably formed in relation to potential. The operation of
the parasitic element can cause interference with circuit operation, thus resulting in a malfunction and then
breakdown of the input terminal. Therefore, pay thorough attention not to handle the input terminals, such as to
apply to the input terminals a voltage lower than the GND respectively, so that any parasitic element will operate.
Furthermore, do not apply a voltage to the input terminals when no power supply voltage is applied to the IC. In
addition, even if the power supply voltage is applied, apply to the input terminals a voltage lower than the power
supply voltage or within the guaranteed value of electrical characteristics.
(7) External capacitor
In order to use a ceramic capacitor as the external capacitor, determine the constant with consideration given to a
degradation in the nominal capacitance due to DC bias and changes in the capacitance due to temperature, etc.
(8) Thermal design
Perform thermal design in which there are adequate margins by taking into account the power dissipation (PD) in
actual states of use.
REV. B
Notice
Notes
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Examples of application circuits, circuit constants and any other information contained herein
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However, should you incur any damage arising from any inaccuracy or misprint of such
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