DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
BF621; BF623
PNP high-voltage transistors
Product data sheet
Supersedes data of 1999 Apr 21
2004 Dec 14
NXP Semiconductors
Product data sheet
PNP high-voltage transistors
FEATURES
•
Low current (max. 50 mA)
•
High voltage (max. 300 V).
APPLICATIONS
•
Video output stages.
DESCRIPTION
PNP high-voltage transistor in a SOT89 plastic package.
NPN complements: BF620 and BF622.
MARKING
TYPE NUMBER
BF621
BF623
MARKING CODE
DF
DB
3
2
1
BF621; BF623
PINNING
PIN
1
2
3
emitter
collector
base
DESCRIPTION
2
3
1
sym079
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BF621
BF623
SC-62
DESCRIPTION
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
VERSION
SOT89
2004 Dec 14
2
NXP Semiconductors
Product data sheet
PNP high-voltage transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
BF621
BF623
V
CEO
collector-emitter voltage
BF621
BF623
V
EBO
I
C
I
CM
I
BM
P
tot
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
T
amb
≤
25
°C
note 1
note 2
note 3
T
stg
T
j
T
amb
Notes
storage temperature
junction temperature
ambient temperature
−
−
−
open collector
open base
−
−
−
−
−
−
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
BF621; BF623
MIN.
MAX.
−300
−250
−300
−250
−5
−50
−100
−50
0.5
0.8
1.1
+150
150
+150
UNIT
V
V
V
V
V
mA
mA
mA
W
W
W
°C
°C
°C
−65
−
−65
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm
2
.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm
2
.
2004 Dec 14
3
NXP Semiconductors
Product data sheet
PNP high-voltage transistors
BF621; BF623
1600
P
tot
(mW)
1200
(1)
006aaa238
800
(2)
(3)
400
0
−75
−25
25
75
125
175
T
amb
(°C)
(1) FR4 PCB; 6 cm
2
mounting pad for collector.
(2) FR4 PCB; 1 cm
2
mounting pad for collector.
(3) FR4 PCB; standard footprint.
Fig.2 Power derating curves.
2004 Dec 14
4
NXP Semiconductors
Product data sheet
PNP high-voltage transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
in free air
note 1
note 2
note 3
R
th(j-s)
Notes
thermal resistance from junction to
soldering point
BF621; BF623
VALUE
250
156
113
30
UNIT
K/W
K/W
K/W
K/W
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm
2
.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm
2
.
10
3
Z
th
(K/W)
10
2
006aaa235
(1)
(3)
(2)
(4)
(5)
(6)
(7)
10
(8)
(9)
(10)
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
Mounted on FR4 printed-circuit board; standard footprint.
(1)
δ
= 1.
(2)
δ
= 0.75.
(3)
δ
= 0.5.
(4)
δ
= 0.33.
(5)
δ
= 0.2.
(6)
δ
= 0.1.
(7)
δ
= 0.05.
(8)
δ
= 0.02.
(9)
δ
= 0.01.
(10)
δ
= 0.
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
2004 Dec 14
5
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