SRAM Module, 1MX8, 20ns, CMOS
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | APTA Group Inc |
| package instruction | DIP, DIP60,.6 |
| Reach Compliance Code | unknown |
| ECCN code | 3A991.B.2.A |
| Maximum access time | 20 ns |
| Other features | CONFIGURABLE AS 256K X 32 |
| Spare memory width | 16 |
| I/O type | COMMON |
| JESD-30 code | R-XDMA-T60 |
| JESD-609 code | e0 |
| memory density | 8388608 bit |
| Memory IC Type | SRAM MODULE |
| memory width | 8 |
| Number of functions | 1 |
| Number of terminals | 60 |
| word count | 1048576 words |
| character code | 1000000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 1MX8 |
| Output characteristics | 3-STATE |
| Package body material | UNSPECIFIED |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP60,.6 |
| Package shape | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | 5 V |
| Certification status | Not Qualified |
| Maximum standby current | 0.016 A |
| Minimum standby current | 4.5 V |
| Maximum slew rate | 1.2 mA |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
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