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M36LLR8760T1ZAQE

Description
SPECIALTY MEMORY CIRCUIT, PBGA88, 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, LFBGA-88
Categorystorage    storage   
File Size428KB,19 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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M36LLR8760T1ZAQE Overview

SPECIALTY MEMORY CIRCUIT, PBGA88, 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, LFBGA-88

M36LLR8760T1ZAQE Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeBGA
package instruction8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, LFBGA-88
Contacts88
Reach Compliance Codeunknown
Other featuresPSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
JESD-30 codeR-PBGA-B88
JESD-609 codee1
length10 mm
memory density268435456 bit
Memory IC TypeMEMORY CIRCUIT
memory width16
Mixed memory typesFLASH+PSRAM
Number of functions1
Number of terminals88
word count16777216 words
character code16000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize16MX16
Package body materialPLASTIC/EPOXY
encapsulated codeLFBGA
Encapsulate equivalent codeBGA88,8X12,32
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
power supply1.8 V
Certification statusNot Qualified
Maximum seat height1.4 mm
Maximum standby current0.00011 A
Maximum slew rate0.052 mA
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width8 mm
M36LLR8760T1, M36LLR8760D1
M36LLR8760M1, M36LLR8760B1
256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory
64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
TARGET SPECIFICATION
FEATURES SUMMARY
MULTI-CHIP PACKAGE
– 1 die of 256 Mbit (16Mb x16, Multiple
Bank, Multi-level, Burst) Flash Memory
– 1 die of 128 Mbit (8Mb x16, Multiple Bank,
Multi-Level, Burst) Flash Memory
– 1 die of 64 Mbit (4Mb x16) Pseudo SRAM
SUPPLY VOLTAGE
– V
DDF1
= V
DDF2
= V
CCP
= V
DDQF
= 1.7 to
1.95V
– V
PPF
= 9V for fast program (12V tolerant)
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Configuration (Top + Top)
M36LLR8760T1: 880Dh + 88C4h
– Mixed Configuration (Bottom + Top)
M36LLR8760D1: 880Eh + 88C4h
– Mixed Configuration (Top + Bottom)
M36LLR8760M1: 880Dh + 88C5h
– Bottom Configuration (Bottom + Bottom)
M36LLR8760B1: 880Eh + 88C5h
PACKAGE
– Compliant with Lead-Free Soldering
Processes
– Lead-Free Versions
Figure 1. Package
FBGA
LFBGA88 (ZAQ)
8 x 10mm
FLASH MEMORIES
SYNCHRONOUS / ASYNCHRONOUS READ
– Synchronous Burst Read mode: 54MHz
– Asynchronous Page Read mode
– Random Access: 85ns
SYNCHRONOUS BURST READ SUSPEND
PROGRAMMING TIME
– 10µs typical Word program time using
Buffer Enhanced Factory Program
command
MEMORY ORGANIZATION
– Multiple Bank Memory Array:
16 Mbit Banks for the 256 Mbit Memory
8 Mbit Banks for the 128 Mbit Memory
– Parameter Blocks (at Top or Bottom)
COMMON FLASH INTERFACE (CFI)
100,000 PROGRAM/ERASE CYCLES per
BLOCK
DUAL OPERATIONS
– program/erase in one Bank while read in
others
– No delay between read and write
operations
SECURITY
– 64 bit unique device number
– 2112 bit user programmable OTP Cells
BLOCK LOCKING
– All blocks locked at power-up
– Any combination of blocks can be locked
with zero latency
– WP
F
for Block Lock-Down
– Absolute Write Protection with V
PPF
= V
SS
PSRAM
ACCESS TIME: 70ns
ASYNCHRONOUS PAGE READ
– Page Size: 16 words
– Subsequent read within page: 20ns
LOW POWER FEATURES
– Temperature Compensated Refresh
(TCR)
– Partial Array Refresh (PAR)
– Deep Power-Down (DPD) Mode
SYNCHRONOUS BURST READ/WRITE
1/19
July 2005
This is preliminary information on a new product forseen to be developed. Details are subject to change without notice.

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