MEMORY MODULE,SRAM,128KX32,HYBRID,DIP,68PIN,CERAMIC
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | NXP |
| package instruction | DIP, DIP68(UNSPEC) |
| Reach Compliance Code | unknown |
| Maximum access time | 25 ns |
| I/O type | COMMON |
| JESD-30 code | R-XDIP-T68 |
| JESD-609 code | e0 |
| memory density | 4194304 bit |
| Memory IC Type | SRAM MODULE |
| memory width | 32 |
| Number of terminals | 68 |
| word count | 131072 words |
| character code | 128000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 128KX32 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP68(UNSPEC) |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| power supply | 5 V |
| Certification status | Not Qualified |
| Filter level | 38535Q/M;38534H;883B |
| Minimum standby current | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | HYBRID |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | DUAL |
| 46226-25/BXAJC | 46226-30/BXAJC | 46226-30/BYAJC | 46226-45/BXAJC | |
|---|---|---|---|---|
| Description | MEMORY MODULE,SRAM,128KX32,HYBRID,DIP,68PIN,CERAMIC | MEMORY MODULE,SRAM,128KX32,HYBRID,DIP,68PIN,CERAMIC | MEMORY MODULE,SRAM,128KX32,HYBRID,SO,68PIN,CERAMIC | MEMORY MODULE,SRAM,128KX32,HYBRID,DIP,68PIN,CERAMIC |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| Maker | NXP | NXP | NXP | NXP |
| package instruction | DIP, DIP68(UNSPEC) | DIP, DIP68(UNSPEC) | SOP, SO68(UNSPEC) | DIP, DIP68(UNSPEC) |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| Maximum access time | 25 ns | 30 ns | 30 ns | 45 ns |
| I/O type | COMMON | COMMON | COMMON | COMMON |
| JESD-30 code | R-XDIP-T68 | R-XDIP-T68 | R-XDSO-G68 | R-XDIP-T68 |
| JESD-609 code | e0 | e0 | e0 | e0 |
| memory density | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit |
| Memory IC Type | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE |
| memory width | 32 | 32 | 32 | 32 |
| Number of terminals | 68 | 68 | 68 | 68 |
| word count | 131072 words | 131072 words | 131072 words | 131072 words |
| character code | 128000 | 128000 | 128000 | 128000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -55 °C | -55 °C | -55 °C | -55 °C |
| organize | 128KX32 | 128KX32 | 128KX32 | 128KX32 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Package body material | CERAMIC | CERAMIC | CERAMIC | CERAMIC |
| encapsulated code | DIP | DIP | SOP | DIP |
| Encapsulate equivalent code | DIP68(UNSPEC) | DIP68(UNSPEC) | SO68(UNSPEC) | DIP68(UNSPEC) |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | SMALL OUTLINE | IN-LINE |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| power supply | 5 V | 5 V | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Filter level | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B |
| Minimum standby current | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | NO | YES | NO |
| technology | HYBRID | HYBRID | HYBRID | HYBRID |
| Temperature level | MILITARY | MILITARY | MILITARY | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | GULL WING | THROUGH-HOLE |
| Terminal location | DUAL | DUAL | DUAL | DUAL |