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2N5308D75Z

Description
Small Signal Bipolar Transistor, 1.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size292KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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2N5308D75Z Overview

Small Signal Bipolar Transistor, 1.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

2N5308D75Z Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)1.2 A
Collector-emitter maximum voltage40 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)20000
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)60 MHz
Base Number Matches1
2N5308
Discrete POWER & Signal
Technologies
2N5308
C
BE
TO-92
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at currents to 1.0 A. Sourced from
Process 05. See MPSA14 for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
40
40
12
1.2
-55 to +150
Units
V
V
V
A
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
2N5308
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
©
1997 Fairchild Semiconductor Corporation

2N5308D75Z Related Products

2N5308D75Z 2N5308L34Z
Description Small Signal Bipolar Transistor, 1.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 Small Signal Bipolar Transistor, 1.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code compli unknow
ECCN code EAR99 EAR99
Maximum collector current (IC) 1.2 A 1.2 A
Collector-emitter maximum voltage 40 V 40 V
Configuration DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 20000 20000
JEDEC-95 code TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM
Transistor component materials SILICON SILICON
Base Number Matches 1 1

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