2SD755, 2SD756, 2SD756A
Silicon NPN Epitaxial
Application
•
Low frequency high voltage amplifier
•
Complementary pair with 2SB715, 2SB716 and 2SB716A
Outline
TO-92MOD
1. Emitter
2. Collector
3. Base
3
2
1
2SD755, 2SD756, 2SD756A
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
2SD755
100
100
5
50
750
150
–55 to +150
2SD756
120
120
5
50
750
150
–55 to +150
2SD756A
140
140
5
50
750
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
2SD755
Item
Collector to emitter
breakdown voltage
Collector to base
breakdown voltage
Collector cutoff current
Symbol Min
V
(BR)CEO
100
V
(BR)CBO
100
I
CBO
—
250
125
—
—
—
—
Typ
—
—
—
—
—
—
—
350
1.6
Max
—
—
0.5
2SD756
Min
120
120
—
Typ Max
—
—
—
—
—
—
—
0.5
800
—
0.75
—
350
1.6
0.2
—
—
2SD756A
Min
140
140
—
250
125
—
—
—
—
Typ Max
—
—
—
—
—
—
—
350
1.6
—
—
0.5
500
—
0.75
0.2
—
—
V
V
Unit Test conditions
V
V
µA
I
C
= 1 mA,
R
BE
=
∞
I
C
= 10
µA,
I
E
= 0
V
CB
= 100 V, I
E
= 0
V
CE
= 12 V,
I
C
= 2 mA
V
CE
= 12 V,
I
C
= 10 mA
V
CE
= 12 V,
I
C
= 2 mA
I
C
= 10 mA,
I
B
= 1 mA
DC current transfer ratio h
FE1
*
1
h
FE2
Base to emitter voltage
Collector to emitter
saturation voltage
V
BE
V
CE(sat)
1200 250
—
0.75
0.2
—
—
125
—
—
—
—
Gain bandwidth product f
T
Collector output
capacitance
Cob
MHz V
CE
= 12 V,
I
C
= 5 mA
pF
V
CB
= 25 V, I
E
= 0,
f = 1 MHz
Note:
1. The 2SD755, 2SD756 and 2SD756A are grouped by h
FE1
as follows.
D
E
400 to 800
400 to 800
—
F
600 to 1200
—
—
250 to 500
250 to 500
250 to 500
2SD755
2SD756
2SD756A
2
2SD755, 2SD756, 2SD756A
Typical Output Characteristics
Maximum Collector Dissipation Curve
Collector Power Dissipation Pc (mW)
750
Collector Current I
C
(mA)
8
8
6
6
4
4
2
2
I
B
= 0
0
50
100
150
Ambient Temperature Ta (°C)
0
10
20
30
40
50
Collector to Emitter Voltage V
CE
(V)
10
10
µA
500
250
Typical Transfer Characteristics
10
DC Current Transfer Ratio h
FE
Collector Current I
C
(mA)
3
1.0
0.3
0.1
0.03
0.01
0.2
V
CE
= 12 V
Ta = 100°C 75 50 25 0
–25
1,200
DC Current Transfer Ratio vs.
Collector Current
V
CE
= 12 V
1,000
800
600
400
200
0
0.01
Ta =
100
°
C
75
50
25
0
–25
0.3 0.4 0.5 0.6 0.7 0.8
Base to Emitter Voltage V
BE
(V)
0.03
0.1
0.3
1.0
3
Collector Current I
C
(mA)
10
30
3
2SD755, 2SD756, 2SD756A
Gain Bandwidth Product vs.
Collector Current
1,000
Gain Bandwidth Product f
T
(MHz)
300
100
V
CE
= 12 V
30
10
0.01 0.03
0.1
0.3
1.0
3
Collector Current I
C
(mA)
10
30
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Output Capacitance C
ob
(pF)
50
f = 1 MHz
I
E
= 0
100
Collector Current I
C
(mA)
50
20
Area of Safe Operation
I
C (max)
(DC Operation)
Pc
=
75
0
20
10
5
m
W
Ta = 25°C
10
5
2
1
(50 V, 15 mA)
2
1.0
0.5
1
3
10
30
100
Collector to Base Voltage V
CB
(V)
(100 V, 6 mA)
(120 V, 5 mA)
(140 V, 4 mA)
2SD755
5
2SD756
2SD756A
10
20
50 100 200
500
Collector to Emitter Voltage V
CE
(V)
4
Unit: mm
4.8
±
0.3
3.8
±
0.3
0.65
±
0.1
0.75 Max
0.5
±
0.1
0.7
0.60 Max
2.3 Max
10.1 Min
8.0
±
0.5
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 Mod
—
Conforms
0.35 g
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