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2SD756E

Description
Small Signal Bipolar Transistor, 0.05A I(C), NPN, TO-92MOD, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size29KB,6 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SD756E Overview

Small Signal Bipolar Transistor, 0.05A I(C), NPN, TO-92MOD, 3 PIN

2SD756E Parametric

Parameter NameAttribute value
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknow
Maximum collector current (IC)0.05 A
ConfigurationSingle
Minimum DC current gain (hFE)400
JESD-30 codeO-PBCY-T3
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.75 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Nominal transition frequency (fT)350 MHz
Base Number Matches1
2SD755, 2SD756, 2SD756A
Silicon NPN Epitaxial
Application
Low frequency high voltage amplifier
Complementary pair with 2SB715, 2SB716 and 2SB716A
Outline
TO-92MOD
1. Emitter
2. Collector
3. Base
3
2
1
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