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LA8175M

Description
IC,RF AMPLIFIER,SINGLE,FP,4PIN,PLASTIC
CategoryWireless rf/communication    Radio frequency and microwave   
File Size174KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

LA8175M Overview

IC,RF AMPLIFIER,SINGLE,FP,4PIN,PLASTIC

LA8175M Parametric

Parameter NameAttribute value
MakerON Semiconductor
Reach Compliance Codecompliant
Installation featuresSURFACE MOUNT
Number of functions1
Number of terminals4
Maximum operating temperature70 °C
Minimum operating temperature-20 °C
Package body materialPLASTIC/EPOXY
Encapsulate equivalent codeFL4,.06
power supply5 V
surface mountYES
Ordering number : ENN*8131
LA8175M
Overview
Monolithic Linear IC
Broadband Amplifier
The LA8175M is a broadband general purpose, low cost, high linearity RF amplifier IC.
The device offers 7 dB gain, 4.5 dB noise figure and achieves an input third order intercept point of +24 dBm.
The device is suitable to design tuner applications.
Features
7 dB Gain
4.5 dB Noise Figure
Typical IIP3 is +24 dBm
Single +5 V supply
Applications
Set top box
Cable splitters
Antenna System
Specitications
Absolute Maximum Ratings
at Ta = 25
°C
Parameter
Maximum Supply voltage
Allowable power dissipation
Operating temperature
Storage temperature
Symbol
VCC max
Pd max
Topr
Tstg
Ta
75°C
When mounted on printed circuit board
-20 to +75
-40 to +150
°C
°C
Conditions
Ratings
5.5
TBD
Unit
V
W
Recommended Operating Conditions
at Ta = 25
°C
Parameter
Supply voltage
Operating supply voltage range
Symbol
VCC
VCC op
Conditions
Ratings
5.0
4.5 to 5.25
Unit
V
V
D2404 TN PC No.8131-1/5
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