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2N5400-C

Description
Small Signal Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size378KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric View All

2N5400-C Overview

Small Signal Bipolar Transistor,

2N5400-C Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codecompli
Base Number Matches1
2N5400
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
-0.6 A, -130 V
PNP Plastic Encapsulated Transistor
FEATURES
Switching and amplification in high voltage
Applications such as telephony
Low current(max.600mA)
High voltage(max.130V)
TO-92
G
H
J
A
D
Emitter
Base
Collector
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
REF.
Collector
B
K


Base
E
C
F

Emitter
A
B
C
D
E
F
G
H
J
K
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Rating
-130
-120
-5
-600
625
150, -55~150
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
Collector Output Capacitance
Transition Frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE(sat)
V
BE(sat)
C
ob
f
T
Min
-130
-120
-5
-
-
30
40
40
--
--
--
--
-
100
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
-0.1
-0.1
-
180
-
-0.2
-0.5
-1
-1
6
-
Unit
V
V
V
μA
μA
Test Condition
I
C
=-100μA, I
E
= 0A
I
C
=-1mA, I
B
= 0A
I
E
=-10μA, I
C
= 0A
V
CB
=-100V, I
E
= 0 A
V
EB
=-3V, I
C
=0 mA
V
CE
=-5V, I
C
=-1mA
V
CE
=-5V, I
C
=-10mA
V
CE
=-5V, I
C
=-50mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
V
CB
= -10V, I
E
= 0A, f=1MHz
V
CE
= -10V, I
C
= -10mA, f=30MHz
V
V
V
V
pF
MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
29-Dec-2010 Rev. A
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