VISHAY
BAV300 / 301 / 302 / 303
Vishay Semiconductors
Small Signal Switching Diodes, High Voltage
Features
•
•
•
•
•
Silicon Epitaxial Planar Diodes
Saving space
Hermetic sealed parts
Fits onto SOD-323 / SOT-23 footprints
Electrical data identical with the devices
BAV100...BAV103 / BAV200...BAV203
9612315
Applications
General purposes
Mechanical Data
Case:
MicroMELF Glass Case
Weight:
approx. 12 mg
Cathode Band Color:
Black
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Part
BAV300
BAV301
BAV302
BAV303
Type differentiation
V
RRM
= 60 V
V
RRM
= 120 V
V
RRM
= 200 V
V
RRM
= 250 V
Ordering code
BAV300-GS18 or BAV300-GS08
BAV301-GS18 or BAV301-GS08
BAV302-GS18 or BAV302-GS08
BAV303-GS18 or BAV303-GS08
Remarks
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Peak reverse voltage
Test condition
Part
BAV300
BAV301
BAV302
BAV303
Reverse voltage
BAV300
BAV301
BAV302
BAV303
Forward current
Peak forward surge current
Forward peak current
t
p
= 1 s, T
j
= 25 °C
f = 50 Hz
Symbol
V
RRM
V
RRM
V
RRM
V
RRM
V
R
V
R
V
R
V
R
I
F
I
FSM
I
FM
Value
60
120
200
250
50
100
150
200
250
1
625
Unit
V
V
V
V
V
V
V
V
mA
A
mA
Document Number 85545
Rev. 1.8, 14-May-04
www.vishay.com
1
BAV300 / 301 / 302 / 303
Vishay Semiconductors
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
mounted on epoxy-glass hard
tissue, Fig. 4
35
µm
copper clad, 0.9 mm
2
copper area per electrode
Junction temperature
Storage temperature range
T
j
T
stg
175
- 65 to + 175
Symbol
R
thJA
Value
500
VISHAY
Unit
K/W
°C
°C
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse current
Test condition
I
F
= 100 mA
V
R
= 50 V
V
R
= 100 V
V
R
= 150 V
V
R
= 200 V
T
j
= 100 °C, V
R
= 50 V
T
j
= 100 °C, V
R
= 100 V
T
j
= 100 °C, V
R
= 150V
T
j
= 100 °C, V
R
= 200V
Breakdown voltage
I
R
= 100
µA,
t
p
/T = 0.01,
t
p
= 0.3 ms
I
R
= 100
µA,
t
p
/T = 0.01,
t
p
= 0.3 ms
BAV300
BAV301
BAV302
BAV303
BAV300
BAV301
BAV302
BAV303
BAV300
BAV301
BAV302
BAV303
Diode capacitance
Differential forward resistance
Reverse recovery time
V
R
= 0, f = 1 MHz
I
F
= 10 mA
I
F
= I
R
= 30 mA, i
R
= 3 mA,
R
L
= 100
Ω
Part
Symbol
V
F
I
R
I
R
I
R
I
R
I
R
I
R
I
R
I
R
V
(BR)
V
(BR)
V
(BR)
V
(BR)
C
D
r
f
t
rr
60
120
200
250
1.5
5
50
Min
Typ.
Max
1
100
100
100
100
15
15
15
15
Unit
V
nA
nA
nA
nA
µA
µA
µA
µA
V
V
V
V
pF
Ω
ns
www.vishay.com
2
Document Number 85545
Rev. 1.8, 14-May-04
VISHAY
BAV300 / 301 / 302 / 303
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85545
Rev. 1.8, 14-May-04
www.vishay.com
5
Analog electronics
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