2N5400
2N5400
C
B
TO-92
E
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring high voltages.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
120
130
5.0
600
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
2N5400
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
©
2001 Fairchild Semiconductor Corporation
2N5400, Rev A
2N5400
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
I
C
= 1.0 mA, I
B
= 0
I
C
= 100
µA,
I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CB
= 100 V, I
E
= 0
V
CB
= 100 V, I
E
= 0, T
A
= 100
°C
V
EB
= 3.0 V, I
C
= 0
120
130
5.0
100
100
50
V
V
V
nA
µA
nA
ON CHARACTERISTICS*
h
FE
DC Current Gain
V
CE
= 5.0 V, I
C
= 1.0 mA
V
CE
= 5.0 V, I
C
= 10 mA
V
CE
= 5.0 V, I
C
= 50 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
30
40
40
180
0.2
0.5
1.0
1.0
V
V
V
V
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
C
ob
f
T
h
fe
NF
Output Capacitance
Current Gain - Bandwidth Product
Small-Signal Current Gain
Noise Figure
V
CB
= 10 V, f = 1.0 MHz
I
C
= 10 mA, V
CE
= 10 V,
f = 100 MHz
I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
V
CE
= 5.0 V, I
C
= 250
µA,
R
S
= 1.0 kΩ,
f = 10 Hz to 15.7 kHz
100
30
6.0
400
200
8.0
V
pF
*
Pulse Test: Pulse Width
£
300
ms,
Duty Cycle
£
2.0%
2N5400
PNP General Purpose Amplifier
(continued)
Typical Characteristics
V
CESAT
- COLLE CTOR-EMITTER VOLTAGE (V)
h
FE
- TYP ICAL PULSED CURRE NT GAIN
Typical Pulsed Current Gain
vs Collector Current
200
V
CE
= 5V
150
125 °C
Collector-Emitter Saturation
Voltage vs Collector Current
0.4
β
= 10
0.3
100
25 °C
0.2
25 °C
125 °C
50
- 40 °C
0.1
- 40 °C
0
0.0001
0.001
0.01
0.1
I
C
- COLLECTOR CURRENT (A)
1
0
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
100
V
BE(O N)
- BASE-E MITTER ON VOLTAGE (V)
V
BESAT
- BASE -EMITTER VOLTAG E (V)
Base-Emitter Saturation
Voltage vs Collector Current
1
- 40 °C
25 °C
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.8
- 40 °C
25 °C
0.6
125 °C
0.6
125 °C
0.4
β
= 10
0.4
V
C E
= 5V
0.2
0.1
I
C
1
10
- COLLECTOR CURRENT ( mA)
100
0.2
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
100
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
V
CB
= 10 0V
BV
CER
- BREAKDOWN VOLTAGE (V)
100
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
220
210
10
1
200
190
0.1
180
25
50
75
100
125
T
A
- AM BIENT TE MPE RATURE (
°
C)
150
170
0.1
1
10
100
1000
RESISTANCE (k
Ω
)
2N5400
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Input and Output Capacitance
vs Reverse Voltage
80
Power Dissipation vs
Ambient Temperature
700
P
D
- POWER DISSIPATION (mW)
600
500
400
300
200
100
0
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
SOT-23
TO-92
f = 1.0 MHz
CAPACITANCE (pF)
60
40
C
eb
20
C
cb
0
0.1
1
10
100
V
R
- REVERSE BIAS VOLTAGE(V)
TO-92 Tape and Reel Data
TO-92 Packaging
Configuration:
Figure 1.0
TAPE and REEL OPTION
FSCINT Label sample
FAIRCHILD SEMICONDUCTOR CORPORATION
LOT:
CBVK741B019
HTB:B
QTY:
10000
See Fig 2.0 for various
Reeling Styles
NSID:
PN2222N
SPEC:
D/C1:
D9842
SPEC REV:
QA REV:
B2
FSCINT
Label
(FSCINT)
5 Reels per
Intermediate Box
F63TNR
Label
Customized
Label
375mm x 267mm x 375mm
Intermediate Box
F63TNR Label sample
LOT: CBVK741B019
FSID: PN222N
D/C1: D9842
D/C2:
QTY1:
QTY2:
QTY: 2000
SPEC:
SPEC REV:
CPN:
N/F: F
Customized
Label
(F63TNR)3
TO-92 TNR/AMMO PACKING INFROMATION
Packing
Reel
Style
A
E
Ammo
M
P
Quantity
2,000
2,000
2,000
2,000
EOL code
D26Z
D27Z
D74Z
D75Z
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
Unit weight
= 0.22 gm
Reel weight with components
= 1.04 kg
Ammo weight with components = 1.02 kg
Max quantity per intermediate box = 10,000 units
FSCINT
Label
327mm x 158mm x 135mm
Immediate Box
Customized
Label
5 Ammo boxes per
Intermediate Box
F63TNR
Label
333mm x 231mm x 183mm
Intermediate Box
Customized
Label
(TO-92) BULK PACKING INFORMATION
EOL
CODE
J18Z
J05Z
NO EOL
CODE
DESCRIPTION
TO-18 OPTION STD
TO-5 OPTION STD
TO-92 STANDARD
STRAIGHT FOR: PKG 92,
94 (NON PROELECTRON
SERIES), 96
TO-92 STANDARD
STRAIGHT FOR: PKG 94
(PROELECTRON SERIES
BCXXX, BFXXX, BSRXXX),
97, 98
LEADCLIP
DIMENSION
NO LEAD CLIP
NO LEAD CLIP
NO LEADCLIP
QUANTITY
2.0 K / BOX
1.5 K / BOX
2.0 K / BOX
BULK OPTION
See Bulk Packing
Information table
Anti-static
Bubble Sheets
FSCINT Label
L34Z
NO LEADCLIP
2.0 K / BOX
2000 units per
EO70 box for
std option
114mm x 102mm x 51mm
Immediate Box
5 EO70 boxes per
intermediate Box
530mm x 130mm x 83mm
Intermediate box
Customized
Label
FSCINT Label
10,000 units maximum
per intermediate box
for std option
©2001 Fairchild Semiconductor Corporation
March 2001, Rev. B1
京公网安备 11010802033920号
EEWORLD
