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2N5400
Preferred Device
Amplifier Transistors
PNP Silicon
Features
•
Pb−Free Packages are Available*
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COLLECTOR
3
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Value
120
130
5.0
600
625
5.0
1.5
12
−55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
TO−92
CASE 29
STYLE 1
12
1
1
EMITTER
2
BASE
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
3
STRAIGHT LEAD
BULK PACK
3
BENT LEAD
TAPE & REEL
AMMO PACK
2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
2N
5400
AYWW
G
G
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2007
1
March, 2007 − Rev. 2
Publication Order Number:
2N5400/D
2N5400
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector−Base Breakdown Voltage
(I
C
= 100
mAdc,
I
E
= 0)
Emitter−Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0)
(V
CB
= 100 Vdc, I
E
= 0, T
A
= 100°C)
Emitter Cutoff Current
(V
EB
= 3.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 5.0 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
Base−Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Small−Signal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
Noise Figure
(I
C
= 250
mAdc,
V
CE
= 5.0 Vdc, R
S
= 1.0 kW, f = 1.0 kHz)
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
f
T
100
C
obo
h
fe
30
NF
−
200
8.0
dB
−
400
6.0
pF
−
MHz
V
CE(sat)
−
−
V
BE(sat)
−
−
1.0
1.0
0.2
0.5
Vdc
h
FE
30
40
40
−
180
−
Vdc
−
V
(BR)CEO
120
V
(BR)CBO
130
V
(BR)EBO
I
CBO
−
−
I
EBO
−
100
100
50
nAdc
mAdc
nAdc
5.0
−
−
Vdc
−
Vdc
Vdc
Symbol
Min
Max
Unit
ORDERING INFORMATION
Device
2N5400
2N5400G
2N5400RLRP
2N5400RLRPG
Package
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
Shipping
†
5000 Unit / Bulk
5000 Unit / Bulk
2000 Tape & Reel
2000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
2N5400
200
150
T
J
= 125°C
h FE , CURRENT GAIN
100
70
50
−55°C
30
20
V
CE
= − 1.0 V
V
CE
= − 5.0 V
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
I
C
, COLLECTOR CURRENT (mA)
10
20
30
50
100
25°C
Figure 1. DC Current Gain
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
I
B
, BASE CURRENT (mA)
2.0
5.0
10
20
50
I
C
= 1.0 mA
10 mA
30 mA
100 mA
Figure 2. Collector Saturation Region
10
3
IC, COLLECTOR CURRENT (
μ
A)
10
2
10
1
T
J
= 125°C
10
0
10
−1
10
−2
10
−3
0.3
75°C
REVERSE
25°C
FORWARD
V
CE
= 30 V
I
C
= I
CES
0.2
0.1
0
0.1
0.2 0.3 0.4
0.5
V
BE
, BASE−EMITTER VOLTAGE (VOLTS)
0.6
0.7
Figure 3. Collector Cut−Off Region
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3
2N5400
0.9
0.8
V, VOLTAGE (VOLTS)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
0.2 0.3 0.5
1.0 2.0 3.0 5.0
10
20 30
I
C
, COLLECTOR CURRENT (mA)
50
100
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(sat)
@ I
C
/I
B
= 10
θ
V, TEMPERATURE COEFFICIENT (mV/
°
C)
1.0
T
J
= 25°C
2.5
2.0
1.5
1.0
0.5
0
−0.5
−1.0
−1.5
−2.0
−2.5
0.1
q
VB
for V
BE(sat)
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10
20 30
I
C
, COLLECTOR CURRENT (mA)
50
100
q
VC
for V
CE(sat)
T
J
= − 55°C to 135°C
Figure 4. “On” Voltages
Figure 5. Temperature Coefficients
10.2 V
V
in
10
ms
INPUT PULSE
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1.0%
0.25
mF
100
R
B
5.1 k
V
in
100
1N914
3.0 k
R
C
V
out
C, CAPACITANCE (pF)
V
BB
+8.8 V
V
CC
−30 V
100
70
50
30
20
10
7.0
5.0
3.0
2.0
1.0
0.2
0.3
2.0 3.0
5.0 7.0
0.5 0.7 1.0
V
R
, REVERSE VOLTAGE (VOLTS)
C
ibo
T
J
= 25°C
C
obo
Values Shown are for I
C
@ 10 mA
10
20
Figure 6. Switching Time Test Circuit
Figure 7. Capacitances
1000
700
500
300
t, TIME (ns)
200
100
70
50
30
20
2000
I
C
/I
B
= 10
T
J
= 25°C
t
r
@ V
CC
= 120 V
t
r
@ V
CC
= 30 V
t, TIME (ns)
1000
700
500
300
200
100
70
50
30
50
100
200
20
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
50
100
200
I
C
/I
B
= 10
T
J
= 25°C
t
f
@ V
CC
= 30 V
t
s
@ V
CC
= 120 V
t
f
@ V
CC
= 120 V
t
d
@ V
BE(off)
= 1.0 V
V
CC
= 120 V
1.0
2.0 3.0 5.0
10
20 30
10
0.2 0.3 0.5
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 8. Turn−On Time
Figure 9. Turn−Off Time
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