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2N5400_NL

Description
Small Signal Bipolar Transistor, 0.6A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
CategoryDiscrete semiconductor    The transistor   
File Size306KB,9 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
Download Datasheet Parametric View All

2N5400_NL Overview

Small Signal Bipolar Transistor, 0.6A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,

2N5400_NL Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
2N5400
2N5400
C
B
TO-92
E
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring high voltages.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
120
130
5.0
600
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
2N5400
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
©
2001 Fairchild Semiconductor Corporation
2N5400, Rev A
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