EEWORLDEEWORLDEEWORLD

Part Number

Search

BYT52G(Z)

Description
Rectifier Diode, 1 Element, 1.4A, 400V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size64KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
Download Datasheet Parametric Compare View All

BYT52G(Z) Overview

Rectifier Diode, 1 Element, 1.4A, 400V V(RRM),

BYT52G(Z) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
Maximum non-repetitive peak forward current50 A
Number of components1
Maximum operating temperature150 °C
Maximum output current1.4 A
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time0.2 µs
surface mountNO
BL
FEATURES
GALAXY ELECTRICAL
BYT52A(Z)---BYT52M(Z)
VOLT AGE RANGE: 50 --- 1000 V
CURRENT: 1.4 A
FAST RECOVERY RECT IFIERS
Low cos t
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon, Alcohol,Is opropanol and
s im ilar s olvents
DO - 15
MECHANICAL DATA
Cas e:JEDEC DO--15,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces ,0.39 gram s
Mounting pos ition: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50Hz,res is tive or inductive load. For capacitive load,derate by 20%.
BYT
52A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard rectif ied current
9.5mm lead length,
@T
A
=75
BYT
52B
100
70
10
BYT
52D
200
140
200
BYT
52G
400
280
400
1.4
BYT
52J
600
420
600
BYT
52K
800
560
800
BYT
52M
1000
700
1000
UNITS
V
V
V
A
V
RR M
V
R MS
V
DC
I
F(AV)
50
35
50
Peak f orw ard surge current
10ms single half -sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
V
F
I
R
t
rr
C
J
R
qJA
T
J
T
STG
50.0
A
Maximum instantaneous f orw ard voltage
(
@ 1.0A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
1.3
5.0
100.0
200
18
45
-55 ---- + 150
-55 ---- + 150
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
N OTE:1. Meas ured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V D C .
3. Therm al resistance f rom junction to am bient.
www.galaxycn.com
Document Number 0261043
BL
GALAXY ELECTRICAL
1.

BYT52G(Z) Related Products

BYT52G(Z) BYT52A(Z) BYT52K(Z)
Description Rectifier Diode, 1 Element, 1.4A, 400V V(RRM), Rectifier Diode, 1 Element, 1.4A, 50V V(RRM), Rectifier Diode, 1 Element, 1.4A, 800V V(RRM),
Is it Rohs certified? conform to conform to conform to
Maker Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd.
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V 1.3 V 1.3 V
Maximum non-repetitive peak forward current 50 A 50 A 50 A
Number of components 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C
Maximum output current 1.4 A 1.4 A 1.4 A
Maximum repetitive peak reverse voltage 400 V 50 V 800 V
Maximum reverse recovery time 0.2 µs 0.2 µs 0.2 µs
surface mount NO NO NO

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 236  2277  1440  1779  2471  5  46  29  36  50 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号