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BYV26C(Z)

Description
Rectifier Diode, 1 Element, 1A, 600V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size53KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
Download Datasheet Parametric Compare View All

BYV26C(Z) Overview

Rectifier Diode, 1 Element, 1A, 600V V(RRM),

BYV26C(Z) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)2.5 V
Maximum non-repetitive peak forward current30 A
Number of components1
Maximum operating temperature150 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.03 µs
surface mountNO
BL
FEATURES
GALAXY ELECTRICAL
BYV26A(Z) - - - BYV26E(Z)
VOLTAGE RANGE: 200 --- 1000 V
CURRENT: 1.0 A
SUPER FAST RECTIFIERS
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
DO - 41
MECHANICAL DATA
Case: JEDEC DO-41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces,0.34 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BYV26A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5
mm lead length,
@T
A
=75
BYV26B BYV26C BYV26D
400
280
400
600
420
600
1.0
800
560
800
BYV26E
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
200
140
200
Peak forw ard surge current
10ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
30.0
A
Maximum instantaneous forw ard voltage
@ 1.0A
Maximum reverse current
@T
A
=25
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
30
45
2.5
5.0
150.0
75
40
100
- 55 ----- + 150
- 55 ----- + 150
V
A
ns
pF
/W
at rated DC blocking voltage @T
A
=100
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
www.galaxycn.com
Document Number 0264013
BL
GALAXY ELECTRICAL
1.

BYV26C(Z) Related Products

BYV26C(Z) BYV26A(Z) BYV26B(Z) BYV26D(Z) BYV26E(Z)
Description Rectifier Diode, 1 Element, 1A, 600V V(RRM), Rectifier Diode, 1 Element, 1A, 200V V(RRM), Rectifier Diode, 1 Element, 1A, 400V V(RRM), Rectifier Diode, 1 Element, 1A, 800V V(RRM), Rectifier Diode, 1 Element, 1A, 1000V V(RRM),
Is it Rohs certified? conform to conform to conform to conform to conform to
Maker Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd.
Reach Compliance Code unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V
Maximum non-repetitive peak forward current 30 A 30 A 30 A 30 A 30 A
Number of components 1 1 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 1 A 1 A 1 A 1 A 1 A
Maximum repetitive peak reverse voltage 600 V 200 V 400 V 800 V 1000 V
Maximum reverse recovery time 0.03 µs 0.03 µs 0.03 µs 0.075 µs 0.075 µs
surface mount NO NO NO NO NO
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