VISHAY
BYV26
Vishay Semiconductors
Ultra Fast Avalanche Sinterglass Diode
\
Features
•
•
•
•
•
Glass passivated junction
Hermetically sealed package
Very low switching losses
Low reverse current
High reverse voltage
Applications
Switched mode power supplies
High-frequency inverter circuits
949539
Mechanical Data
Case:
Sintered glass case, SOD 57
Terminals:
Plated axial leads, solderable per MIL-
STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
370 mg, (max. 500 mg)
Parts Table
Part
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
Type differentiation
V
R
= 200 V; I
FAV
= 1 A
V
R
= 400 V; I
FAV
= 1 A
V
R
= 600 V; I
FAV
= 1 A
V
R
= 800 V; I
FAV
= 1 A
V
R
= 1000 V; I
FAV
= 1 A
SOD57
SOD57
SOD57
SOD57
SOD57
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage = Repetitive peak reverse
voltage
Test condition
see electrical characteristics
see electrical characteristics
see electrical characteristics
see electrical characteristics
see electrical characteristics
Peak forward surge current
Average forward current
Non repetitive reverse avalanche energy
Junction and storage temperature range
I
(BR)R
= 1 A, inductive load
t
p
= 10 ms, half sinewave
Sub type
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
Symbol
V
R
=
V
RRM
V
R
=
V
RRM
V
R
=
V
RRM
V
R
=
V
RRM
V
R
=
V
RRM
I
FSM
I
FAV
E
R
Value
200
400
600
800
1000
30
1
10
Unit
V
V
V
V
V
A
A
mJ
°C
T
j
= T
stg
- 55 to +
175
Document Number 86040
Rev. 5, 07-Jan-03
www.vishay.com
1
BYV26
Vishay Semiconductors
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
l = 10 mm, T
L
= constant
Sub type
Symbol
R
thJA
Value
45
VISHAY
Unit
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse current
Reverse breakdown voltage
I
F
= 1 A
I
F
= 1 A, T
j
= 175 °C
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 150 °C
I
R
= 100
µA
I
R
= 100
µA
I
R
= 100
µA
I
R
= 100
µA
I
R
= 100
µA
Reverse recovery time
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
BYV26A-
BYV26C
BYV26D-
BYV26E
Test condition
Sub type
Symbol
V
F
V
F
I
R
I
R
V
(BR)R
V
(BR)R
V
(BR)R
V
(BR)R
V
(BR)R
t
rr
t
rr
300
500
700
900
1100
30
75
Min
Typ.
Max
2.5
1.3
5
100
Unit
V
V
µA
µA
V
V
V
V
V
ns
ns
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
P – Maximum Reverse Power Dissipation ( mW )
R
600
V
R
=V
RRM
R
thJA
=45K/W
200V
R
thJA
=100K/W
300
600V
200
100
1000V
0
0
40
80
120
160
200
T
j
– Junction Temperature (
°C
)
800V
400V
I
R
– Reverse Current (
m
A )
1000
500
400
100
10
1
V
R
=V
RRM
0
40
80
120
160
200
0.1
95 9729
95 9728
T
j
– Junction Temperature (
°C
)
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
Figure 2. Max. Reverse Current vs. Junction Temperature
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2
Document Number 86040
Rev. 5, 07-Jan-03
VISHAY
BYV26
Vishay Semiconductors
1.2
I
FAV
– Average Forward Current ( A )
40
1.0
0.8
0.6
0.4
R
thJA
=100K/W
0.2
0
0
40
80
120
160
200
16380
R
thJA
=45K/W
C
D
– Diode Capacitance ( pF )
35
30
25
20
15
10
5
0
0.1
f=1MHz
BYV26C
95 9730
T
amb
– Ambient Temperature (
°C
)
1.0
10.0
V
R
– Reverse Voltage ( V )
100.0
Figure 3. Max. Average Forward Current vs. Ambient Temperature
Figure 5. Diode Capacitance vs. Reverse Voltage
10
T
j
=175°C
I
F
– Forward Current ( A )
40
C
D
– Diode Capacitance ( pF )
1
35
30
25
20
15
10
5
0
f=1MHz
0.1
T
j
=25°C
BYV26E
0.01
0.001
0
95 9731
1
2
3
4
5
6
7
16381
0.1
1.0
10.0
100.0
V
F
– Forward Voltage ( V )
V
R
– Reverse Voltage ( V )
Figure 4. Max. Forward Current vs. Forward Voltage
Figure 6. Diode Capacitance vs. Reverse Voltage
Package Dimensions in mm
∅
3.6 max.
Sintered Glass Case
SOD 57
Weight max. 0.5g
Cathode Identification
technical drawings
according to DIN
specifications
94 9538
∅
0.82 max.
26 min.
4.2 max.
26 min.
Document Number 86040
Rev. 5, 07-Jan-03
www.vishay.com
3
BYV26
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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4
Document Number 86040
Rev. 5, 07-Jan-03
Electronics Design Contest
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