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BYV26E

Description
Rectifier Diode, 1 Element, 1A, 1000V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size90KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric Compare View All

BYV26E Overview

Rectifier Diode, 1 Element, 1A, 1000V V(RRM),

BYV26E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)2.5 V
Maximum non-repetitive peak forward current30 A
Number of components1
Maximum operating temperature175 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage1000 V
Maximum reverse recovery time0.075 µs
surface mountNO
TH97/2478
TH09/2479
www.eicsemi.com
IATF 0113686
SGS TH07/1033
BYV26A - BYV26E
PRV : 200 - 1000 Volts
Io : 1.0 Ampere
FEATURES :
*
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
Pb / RoHS Free
VERY FAST SOFT-RECOVERY
AVALANCHE RECTIFIER DIODES
DO - 41
0.108 (2.74)
0.078 (1.99)
1.00 (25.4)
MIN.
0.205 (5.20)
0.161 (4.10)
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
Rating at 25
°
C ambient temperature unless otherwise specifie.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Minimum Reverse Avalanche Breakdown Voltage @ 100
μ
A
Maximum Average Forward Current ( Note 1 )
Maximum Non-Repetitive Peak Forward Current
Maximum Repetitive Peak Forward Current( Ttp = 85
°
C )
Maximum Forward Voltage at Amp. ; T
J
= 25
°
C
1.0
J
T = 175
°
C
SYMBOL
BYV26A BYV26B BYV26C BYV26D BYV26E BYV26G
UNIT
V
RRM
V
R
V
(BR)R
I
F(AV)
I
FSM
I
FRM
V
F
V
F
I
R
I
R(H)
Trr
R
θ
JA
T
J
T
STG
30
100
- 65 to + 175
- 65 to + 175
200
200
300
400
400
500
600
600
700
1.0
30
10
2.5
1.3
5.0
150
75
150
800
800
900
1000
1000
1100
1400
1400
1500
V
V
V
A
A
A
V
V
Maximum Reverse Current
at Reverse Voltage
Ta = 25
°
C
Ta = 100
°
C
μ
A
μ
A
ns
K/W
Maximum Reverse Recovery Time ( Note 2 )
Typical Thermal Resistance - Junction to Ambient
Junction Temperature Range
Storage Temperature Range
°
C
°
C
Notes :
( 1 ) Ttp = 85
°C
, lead length 10 mm.
( 2 ) Measured with I
F
= 0.5 Amp, I
R
= 1.0A, Irr = 0.25A.
Page 1 of 2
Rev. 03 : March 25, 2005

BYV26E Related Products

BYV26E BYV26A BYV26B BYV26C BYV26D
Description Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Rectifier Diode, 1 Element, 1A, 200V V(RRM), Rectifier Diode, 1 Element, 1A, 400V V(RRM), Rectifier Diode, 1 Element, 1A, 600V V(RRM), Rectifier Diode, 1 Element, 1A, 800V V(RRM),
Is it Rohs certified? conform to conform to conform to conform to conform to
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
Reach Compliance Code compliant compliant compliant compliant compliant
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 2.5 V 1.3 V 1.3 V 1.3 V 1.3 V
Maximum non-repetitive peak forward current 30 A 30 A 30 A 30 A 30 A
Number of components 1 1 1 1 1
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C
Maximum output current 1 A 1 A 1 A 1 A 1 A
Maximum repetitive peak reverse voltage 1000 V 200 V 400 V 600 V 800 V
Maximum reverse recovery time 0.075 µs 0.03 µs 0.03 µs 0.03 µs 0.075 µs
surface mount NO NO NO NO NO
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