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BZX84C18V-T

Description
Zener Diode,
CategoryDiscrete semiconductor    diode   
File Size194KB,6 Pages
ManufacturerRectron
Environmental Compliance
Download Datasheet Parametric View All

BZX84C18V-T Overview

Zener Diode,

BZX84C18V-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerRectron
Reach Compliance Codecompliant
Diode typeZENER DIODE
JESD-609 codee3
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrier
Maximum time at peak reflow temperatureNOT SPECIFIED
BZX84C2V4
THRU
BZX84C75
Features
Planar Die Construction
350mW Power Dissipation
Zener Voltages from 2.4V - 75V
Ideally Suited for Automated Assembly Processes
P/N suffix V means AEC-Q101
q
ualified, e.g:BZX84C2V4V
P/N suffix V means Halogen-free
A
SOT-23
Dim
Min
Max
B
TOP VIEW
C
E
D
G
H
K
J
L
M
All Dimensions in mm
Maximum Ratings
Forward Voltage
Power Dissipation (Note 1)
@T =25 C unless otherwise specified
Symbol
@ I
F
= 10mA
V
F
P
d
R
T
j,
T
STG
350
357
-65 to +150
Value
Unit
V
mW
K/W
C
Characteristic
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Notes:
1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, 300μ s pulse width, period = 5ms.
3. f = 1KHz.
2018-11/03
REV:
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