2SD787, 2SD788
Silicon NPN Epitaxial
ADE-208-1139 (Z)
1st. Edition
Mar. 2001
Application
•
Low frequency power amplifier
•
Complementary pair with 2SB738 and 2SB739
Outline
TO-92MOD
1. Emitter
2. Collector
3. Base
3
2
1
2SD787, 2SD788
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
2SD787
20
16
6
2
0.9
150
–55 to +150
2SD788
20
20
6
2
0.9
150
–50 to +150
Unit
V
V
V
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
2SD787
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Emitter cutoff current
Symbol Min
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
20
16
6
—
—
100
—
—
—
Typ
—
—
—
—
—
—
—
100
20
Max
—
—
—
2
0.2
800
0.3
—
—
2SD788
Min
20
20
6
—
—
100
—
—
—
Typ
—
—
—
—
—
—
—
100
20
Max
—
—
—
2
0.2
800
0.3
—
—
V
MHz
pF
Unit
V
V
V
µA
µA
Test conditions
I
C
= 10
µA,
I
E
= 0
I
C
= 1 mA, R
BE
=
∞
I
E
= 10
µA,
I
C
= 0
V
CB
= 16 V, I
E
= 0
V
EB
= 6 V, I
C
= 0
V
CE
= 2 V, I
C
= 0.1 A
I
C
= 1 A, I
B
= 0.1 A
V
CE
= 2 V,
I
C
= 10 mA
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
DC current transfer ratio h
FE
*
1
Collector to emitter
saturation voltage
V
CE(sat)
Gain bandwidth product f
T
Collector output
capacitance
Note:
B
100 to 200
C
160 to 320
Cob
1. The 2SD787 and 2SD788 are grouped by h
FE
as follows.
D
250 to 500
E
400 to 800
2
2SD787, 2SD788
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(W)
1.2
Collector Current I
C
(mA)
80
Typical Output Characteristics
100
0.3
0.25
0.2
0.8
60
0.15
40
0.4
0.1
20
0.05 mA
I
B
= 0
0
50
100
Ambient Temperature Ta (°C)
150
0
2
4
6
8
10
Collector to Emitter Voltage V
CE
(V)
Typical Output Characteristics
2.0
1,000
20
15
Collector Current I
C
(A)
1.6
10
5 mA
Collector Current I
C
(mA)
300
100
30
10
3
1
0
Typical Transfer Characteristics
V
CE
= 2 V
Ta = 75°C
25
–25
1.2
0.8
P
C
=0
.9 W
0.4
I
B
= 0
0
0.4
0.8
1.2
1.6
2.0
Collector to Emitter Voltage V
CE
(V)
0.2
0.4
0.6
0.8
Base to Emitter Voltage V
BE
(V)
1.0
3
2SD787, 2SD788
Collector to Emitter Saturation Voltage V
CE(sat)
(V)
DC Current Transfer Ratio vs.
Collector Current
10,000
DC Current Transfer Ratio h
FE
3,000
1,000
300
100
30
10
1
3
10
30
100 300
Collector Current I
C
(mA)
1,000
–25
Pulse
V
CE
= 2 V
Ta = 75°C
25
Saturation Voltage vs. Collector Current
Base to Emitter Saturation Voltage V
BE(sat)
(V)
3.0
1.0
0.3
0.1
0.03
V
CE(sat)
0.01
0.003
3
10
30
100 300 1,000 3,000
Collector Current I
C
(mA)
I
C
= 10 I
B
V
BE(sat)
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Output Capacitance C
ob
(pF)
1,000
300
f = 1 MHz
I
E
= 0
100
30
10
0.1
0.3
1.0
3
10
Collector to Base Voltage V
CB
(V)
4
2SD787, 2SD788
Package Dimensions
As of January, 2001
Unit: mm
4.8
±
0.4
3.8
±
0.4
0.65
±
0.1
0.75 Max
0.55Max
0.7
0.60 Max
2.3 Max
10.1 Min
8.0
±
0.5
0.5Max
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
TO-92 Mod
—
Conforms
0.35 g
5
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