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2SA2088T106

Description
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, UMT3, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size73KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

2SA2088T106 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, UMT3, 3 PIN

2SA2088T106 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeSC-70
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-G3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)400 MHz
Base Number Matches1
2SA2088
Transistors
Medium power transistor (
60V,
−0.5
A)
2SA2088
!
Features
1) High speed switching.
(Tf : Typ. : 60ns at I
C
=
500mA)
2) Low saturation voltage, typically
(Typ. :
150mV at I
C
=
100mA, I
B
=
10mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SC5876
!
External dimensions
(Unit : mm)
0.65 0.65
0.3
(3)
UMT3
(SC-70)
<SOT-323>
(1)
1.25
2.1
0.15
0.2
(2)
(1) Emitter
(2) Base
(3) Collector
0.1Min.
Each lead has same dimensions
Abbreviated symbol :
VM
!Applications
Small signal low frequency amplifier
High speed switching
!
Structure
PNP Silicon epitaxial planar transistor
!
Packaging specifications
Package
Type
Taping
T106
3000
Code
Basic ordering unit (pieces)
2SA2088
!
Absolute maximum ratings
(Ta=25°C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
DC
I
C
I
CP
P
C
Limits
−60
−60
−6
−0.5
−1.0
200
150
−55
to 150
Unit
V
V
V
A
A
mW
°C
°C
∗1
∗2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1
Pw=10ms
∗2
Each terminal mounted on a recommended land
Pulsed
Tj
Tstg
0.7
0.9
1.3
2.0
1/3

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