Power Bipolar Transistor, 1.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, SMP, 3 PIN
| Parameter Name | Attribute value |
| Objectid | 1483104786 |
| package instruction | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | HIGH RELIABILITY |
| Maximum collector current (IC) | 1.5 A |
| Collector-emitter maximum voltage | 800 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 20 |
| JESD-30 code | R-PSSO-G2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | NPN |
| Maximum power consumption environment | 40 W |
| Maximum power dissipation(Abs) | 40 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 15 MHz |
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