LQSD103BT/R7 datasheet, PDF - EEWORLD Datasheet

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LQSD103BT/R7: DescriptionRectifier Diode, Schottky, 1 Element, 0.35A, 30V V(RRM), Silicon, ROHS COMPLIANT, GLASS, QUADROMELF-2; CategoryDiscrete semiconductor diode; File Size84KB，3 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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LQSD103BT/R7 Overview

Rectifier Diode, Schottky, 1 Element, 0.35A, 30V V(RRM), Silicon, ROHS COMPLIANT, GLASS, QUADROMELF-2

LQSD103BT/R7 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	PANJIT
Parts packaging code	MELF
package instruction	O-LELF-R2
Contacts	2
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.37 V
JESD-30 code	O-LELF-R2
Maximum non-repetitive peak forward current	15 A
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Maximum output current	0.35 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.4 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	30 V
Maximum reverse recovery time	0.01 µs
surface mount	YES
technology	SCHOTTKY
Terminal form	WRAP AROUND
Terminal location	END
Maximum time at peak reflow temperature	NOT SPECIFIED

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LQSD103A~LQSD103C

SMALL SIGNAL SCHOTTKY BARRIES SWITCHING DIODES

VOLTAGE

20 to 40 Volts

CURRENT

0.35 Amperes

QUADRO-MELF

Unit : inch (mm)

FEATURES

• Low Forward Voltage Drop

• Guard Ring Construction for Transient Protection

• Low Reverse Recovery Time

• Low Reverse Capacitance

• In compliance with EU RoHS 2002/95/EC directives

)

MECHANICAL DATA

•

Case: Molded Glass QUADRO MELF

Terminals: Solderable per MIL-STD-750, Method 2026

Polarity: See Diagram Below

Approx. Weight: 0.03 grams

.020(0.5)

.012(0.3)

.146(3.7)

.130(3.3)

.020(0.5)

.012(0.3)

• Mounting Position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

=25°C unless otherwise noted)

PA RA M E TE R

P e a k R e p e t i t i ve R e ve r s e V o l t a g e

R M S R e ve r s e V o l t a g e

M a x. A ve r a g e R e c t i f i e d C ur r e nt

P e a k F o r w a r d S ur g e C ur r e nt , t < 0 . 3 m s

P o w e r D i s s i p a t i o n D e r a t e A b o ve 2 5

M a x i m u m F o r w a r d V o l t a g e , I

= 2 0 m A

= 2 0 0 m A

M a xi m um R e ve r s e C ur r e nt

Ty p i c a l J u n c t i o n C a p a c i t a n c e ( N o t e 1 )

Ty p i c a l R e v e r s e R e c o v e r y ( N o t e 2 )

Ty p i c a l T h e r m a l R e s i s t a n c e

S t o r a g e Te m p e r a t u r e R a n g e

S YM B O L

RRM

RMS

F ( A V )

F S M

J A

S T G

L QS D 1 0 3 A

L QS D 1 0 3 B

350

400

0 .3 7

0 .7 0

L QS D 1 0 3 C

.063(1.6)

.055(1.4)DIA.

U N IT S

5@30V

5@20V

250

-6 5 to +1 7 5

5@10V

C / W

NOTE:

1. CJ at V

=0, f=1MHZ

2. From I

=50mA to I

=200mA, R

=100Ω

STAD-FEB.09.2009

PAGE . 1

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