2SJ130(L), 2SJ130(S)
Silicon P-Channel MOS FET
ADE-208-1181 (Z)
1st. Edition
Mar. 2001
Application
High speed power switching
Features
•
Low on-resistance
•
High speed switching
•
Low drive current
•
No secondary breakdown
•
Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators
Outline
DPAK-1
4
4
1
1
D
G
1. Gate
2. Drain
3. Source
4. Drain
S
2
3
2 3
2SJ130(L), 2SJ130(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note:
1. Value at T
C
= 25°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch*
1
Tch
Tstg
Ratings
–300
±20
–1
–2
–1
20
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Symbol Min
V
(BR)DSS
V
(BR)GSS
I
GSS
–300
±20
—
—
–2.0
—
0.25
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
6.0
0.4
235
65
16
10
25
35
45
–0.9
200
Max
—
—
±10
–100
–4.0
8.5
—
—
—
—
—
—
—
—
—
—
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
F
= –1 A, V
GS
= 0
I
F
= –1 A, V
GS
= 0,
di
F
/dt = 50 A/µs
I
D
= –0.5 A, V
GS
= –10 V,
R
L
= 60
Unit
V
V
µA
µA
V
Test conditions
I
D
= –10 mA, V
GS
= 0
I
G
= ±100 µA, V
DS
= 0
V
GS
= ±16 V, V
DS
= 0
V
DS
= –240 V, V
GS
= 0
I
D
= –1 mA, V
DS
= –10 V
I
D
= –0.5 A, V
GS
= –10 V*
1
I
D
= –0.5 A, V
DS
= –20 V*
1
V
DS
= –10 V, V
GS
= 0,
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note:
1. Pulse test
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
2
2SJ130(L), 2SJ130(S)
Power vs. Temperature Derating
30
Channel Dissipation Pch (W)
–5
Maximum Safe Operation Area
–2
Drain Current I
D
(A)
20
–1.0
–0.5
D
C
PW
O
pe
ra
=
10
10
µs
10
0
µ
s
1
m
s
m
C
tio
n
s
(T
(1
10
=
Sh
–0.2
–0.1
–0.05
–5
Operation in this area
is limited by R
DS (on)
Ta = 25°C
25
ot
)
)
°C
0
50
100
150
Case Temperature T
C
(°C)
–10 –20
–50 –100 –200 –500
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
–2.0
–15 V
–1.6
Drain Current I
D
(A)
–7 V
–10 V
–6 V
Pulse Test
Drain Current I
D
(A)
–2.0
Typical Transfer Characteristics
–25°C
–1.6
V
DS
= –20 V
Pulse Test
–1.2
T
C
= 25°C
75°C
–1.2
–0.8
–5 V
–0.8
–0.4
V
GS
= –4 V
–0.4
0
–10
–30
–40
–20
–50
Drain to Source Voltage V
DS
(V)
0
–2
–6
–8
–10
–4
Gate to Source Voltage V
GS
(V)
3
2SJ130(L), 2SJ130(S)
Drain to Source Saturation Voltage V
DS (on)
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
–20
Pulse Test
–16
I
D
= –2 A
–12
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
50
20
10
5
–15 V
2
1.0
0.5
–0.05 –0.1 –0.2
–0.5 –1.0 –2
Drain Current I
D
(A)
Pulse Test
V
GS
= –10 V
Static Drain to Source on State
Resistance vs. Drain Current
–8
–1 A
–4
–0.5 A
0
–4
–12
–16
–8
Gate to Source Voltage V
GS
(V)
–20
–5
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
yfs
(S)
20
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
5
V
DS
= –20 V
Pulse Test
–25°C
Ta = 25°C
1.0
0.5
75°C
0.2
0.1
0.05
–0.02
16
V
GS
= –10 V
Pulse Test
I
D
= –2 A
–1 A
2
12
8
–0.5 A
4
0
–40
0
80
120
40
Case Temperature T
C
(°C)
160
–0.05 –0.1 –0.2
–0.5 –1.0
Drain Current I
D
(A)
–2
4
2SJ130(L), 2SJ130(S)
Forward Transfer Admittance
vs. Frequency
Forward Transfer Admittance
yfs
(S)
5
T
C
= 25°C
V
DS
= –20 V
I
D
= –0.5 A
1,000
V
GS
= 0
f = 1 MHz
Ciss
Capacitance C (pF)
100
Coss
Typical Capacitance vs.
Drain to Source Voltage
2
1
0.5
0.2
0.1
0.05
0.2 M
10
Crss
1
0.5 M 1.0 M 2 M
5M
Frequency f (Hz)
10 M 20 M
0
–20
–10
–30
–40
Drain to Source Voltage V
DS
(V)
–50
Dynamic Input Characteristics
0
RDrain to Source V
DS
(V)
Gate to Source Voltage V
GS
(V)
V
DD
= –50V
–100 V
–200 V
V
DD
= –200 V
–200
–100 V
V
DS
–50 V
–12
V
GS
–400
I
D
= –1 A
–500
0
4
8
12
16
Gate Charge Qg (nc)
–20
20
–16
–8
0
100
50
Switching Time t (ns)
Switching Characteristics
t
f
t
d (off)
–100
–4
20
10
5
t
d (on)
t
r
–300
2
V
GS
= –10 V
PW = 2
µs
duty < 1%
.
.
V
DD
=
30 V
1
–0.05 –0.1 –0.2
–0.5 –1.0 –2
Drain Current I
D
(A)
–5
5
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