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2N5550, 2N5551
Preferred Device
Amplifier Transistors
NPN Silicon
Features
•
Pb−Free Packages are Available*
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COLLECTOR
3
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
2N5550
2N5551
Collector − Base Voltage
2N5550
2N5551
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
P
D
P
D
T
J
, T
stg
V
CBO
160
180
6.0
600
625
5.0
1.5
12
−55 to +150
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
12
3
TO−92
CASE 29
STYLE 1
Symbol
V
CEO
140
160
Vdc
Value
Unit
Vdc
2
BASE
1
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2N
555x
AYWW
G
G
x = 0 or 1
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
March, 2006 − Rev. 4
Publication Order Number:
2N5550/D
2N5550, 2N5551
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector−Base Breakdown Voltage
(I
C
= 100
mAdc,
I
E
= 0 )
Emitter−Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0)
(V
CB
= 120 Vdc, I
E
= 0)
(V
CB
= 100 Vdc, I
E
= 0, T
A
= 100°C)
(V
CB
= 120 Vdc, I
E
= 0, T
A
= 100°C)
Emitter Cutoff Current
(V
EB
= 4.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 5.0 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
Base−Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Small−Signal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
Noise Figure
(I
C
= 250
mAdc,
V
CE
= 5.0 Vdc, R
S
= 1.0 kW, f = 1.0 kHz)
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
2N5550
2N5551
2N5550
2N5551
h
fe
NF
−
−
10
8.0
f
T
C
obo
C
ibo
−
−
50
30
20
200
−
dB
100
−
300
6.0
MHz
pF
pF
h
FE
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
V
CE(sat)
Both Types
2N5550
2N5551
V
BE(sat)
Both Types
2N5550
2N5551
−
−
−
1.0
1.2
1.0
Vdc
−
−
−
0.15
0.25
0.20
Vdc
60
80
60
80
20
30
−
−
250
250
−
−
−
2N5550
2N5551
2N5550
2N5551
I
EBO
V
(BR)CEO
2N5550
2N5551
V
(BR)CBO
2N5550
2N5551
V
(BR)EBO
6.0
I
CBO
−
−
−
−
−
100
50
100
50
50
nAdc
mAdc
nAdc
−
Vdc
160
180
−
−
Vdc
140
160
−
−
Vdc
Symbol
Min
Max
Unit
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2
2N5550, 2N5551
500
300
h FE , DC CURRENT GAIN
200
100
−55
°C
50
30
20
10
7.0
5.0
0.1
T
J
= 125°C
25°C
V
CE
= 1.0 V
V
CE
= 5.0 V
0.2
0.3
0.5
0.7
1.0
3.0
2.0
5.0
7.0
I
C
, COLLECTOR CURRENT (mA)
10
20
30
50
70
100
Figure 1. DC Current Gain
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I
C
= 1.0 mA
10 mA
30 mA
100 mA
I
B
, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
10
1
V
CE
= 30 V
IC, COLLECTOR CURRENT (
μ
A)
10
0
V, VOLTAGE (VOLTS)
10
−1
10
−2
10
−3
10
−4
10
−5
0.4
T
J
= 125°C
1.0
0.8
I
C
= I
CES
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
0.6
75°C
REVERSE
25°C
FORWARD
0.4
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
0.3
0.2 0.1
0
0.1
0.2 0.3
0.4
V
BE
, BASE−EMITTER VOLTAGE (VOLTS)
0.5
0.6
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
50
100
I
C
, COLLECTOR CURRENT (mA)
Figure 3. Collector Cut−Off Region
Figure 4. “On” Voltages
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3
2N5550, 2N5551
2.5
2.0
1.5
1.0
0.5
0
− 0.5
− 1.0
− 1.5
− 2.0
− 2.5
0.1
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10 20 30
I
C
, COLLECTOR CURRENT (mA)
50
100
q
VB
for V
BE(sat)
q
VC
for V
CE(sat)
T
J
= − 55°C to +135°C
θ
V, TEMPERATURE COEFFICIENT (mV/
°
C)
Figure 5. Temperature Coefficients
100
70
50
10.2 V
V
in
10
ms
INPUT PULSE
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1.0%
0.25
mF
C, CAPACITANCE (pF)
V
BB
−8.8 V
100
R
B
5.1 k
V
in
100
1N914
3.0 k
V
CC
30 V
R
C
V
out
30
20
10
7.0
5.0
3.0
2.0
1.0
Values Shown are for I
C
@ 10 mA
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
C
ibo
T
J
= 25°C
C
obo
10
20
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 6. Switching Time Test Circuit
Figure 7. Capacitances
1000
500
300
t, TIME (ns)
200
100
50
30
20
10
0.2 0.3 0.5
t
d
@ V
EB(off)
= 1.0 V
V
CC
= 120 V
t
r
@ V
CC
= 30 V
I
C
/I
B
= 10
T
J
= 25°C
t
r
@ V
CC
= 120 V
5000
3000
2000
1000
500
300
200
100
1.0
2.0 3.0 5.0 10
20 30 50
I
C
, COLLECTOR CURRENT (mA)
100
200
50
0.2 0.3 0.5
1.0 2.0 3.0 5.0
10
20 30 50
I
C
, COLLECTOR CURRENT (mA)
100
200
t
s
@ V
CC
= 120 V
t
f
@ V
CC
= 120 V
t
f
@ V
CC
= 30 V
I
C
/I
B
= 10
T
J
= 25°C
Figure 8. Turn−On Time
t, TIME (ns)
Figure 9. Turn−Off Time
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