UNISONIC TECHNOLOGIES CO., LTD
2SC4617
GENERAL PURPOSE
TRANSISTOR
FEATURES
NPN SILICON TRANSISTOR
3
3
2
1
2
1
* Low Cob
Cob=2.0pF (typ)
* Complements the UTC 2SA1774
SOT-23
(JEDEC TO-236)
SOT-323
3
3
2
1
2
1
SOT-523
SOT-723
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SC4617L-x-AE3-R
2SC4617G-x-AE3-R
2SC4617L-x-AL3-R
2SC4617G-x-AL3-R
2SC4617L-x-AN3-R
2SC4617G-x-AN3-R
2SC4617L-x-AQ3-R
2SC4617G-x-AQ3-R
Package
SOT-23
SOT-323
SOT-523
SOT-723
(1) R: Tape Reel
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Free
(2) AE3: SOT-23, AL3: SOT-323, AN3: SOT-523
(2) AQ3: SOT-723
(3) Refer to CLASSIFICATION OF H
FE
(4) L: Lead Free, G: Halogen Free
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
2SC4617L- x -AE3- R
MARKING
C5X
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 5
QW-R206-081.E
2SC4617
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C)
NPN SILICON TRANSISTOR
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
7
V
Collector Current
I
C
0.15
A
SOT-523
150
mW
Collector Power Dissipation SOT-23/SOT-323
P
C
200
mW
SOT-723
125
mW
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta= 25°C, unless otherwise specified)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(SAT)
f
T
C
ob
TEST CONDITIONS
I
C
= 50μA
I
C
= 1mA
I
E
=50μA
V
CB
=60V
V
EB
= 7V
V
CE
=6V, I
C
=1mA
I
C
=50mA, I
B
=5mA
V
CE
=12V, I
E
= -2mA,
f=100MHz
V
CE
= 12V, I
E
= 0A, f=1MHz
MIN
60
50
7
TYP
MAX
UNIT
V
V
V
μA
μA
V
MHz
3.5
pF
PARAMETER
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter-base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
120
0.1
0.1
560
0.4
180
2
CLASSIFICATION OF h
FE
RANK
RANGE
Q
120 ~ 270
R
180 ~ 390
S
270 ~ 560
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R206-081.E
2SC4617
TYPICAL CHARACTERISTICS
Grounded Emitter Propagation
Characteristics
50
V
CE
= 6V
NPN SILICON TRANSISTOR
Grounded Emitter Output Characteristics (I)
100
T
A
=25°C
0.50mA
0.45mA
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
20
10
5
2
1
0.5
0.2
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Base to Emitter Voltage, V
BE
(V)
25°C
-55°C
80
60
40
20
0
0
0.40mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
T
A
=100°C
0.05mA
I
B
= 0A
0.4
0.8
1.2
1.6
2.0
Collector to Emitter Voltage, V
CE
(V)
DC Current Gain vs. Collector Current (I)
500
T
A
= 25°C
V
CC
= 5V
3V
1V
Grounded Emitter Output Characteristics (II)
10
8
6
T
A
= 25°C
30µA
27µA
24µA
21µA
200
Collector Current, I
C
(mA)
DC Current Gain, h
FE
18µA
15µA
12µA
9µA
6µA
3µA
I
B
= 0A
0
4
8
12
16
20
100
50
4
20
10
0.2
2
0
0.5
1
2
5
10 20
50 100 200
Collector to Emitter Voltage, V
CE
(V)
Collector Current, I
C
(mA)
DC Current Gain vs. Collector Current (II)
500
Ta = 100℃
25℃
-55℃
100
50
V
CC
= 5V
Collector-Emitter Saturation Voltage vs. Collector
Current
0.5
Ta = 25℃
DC Current Gain, h
FE
200
Collector Saturation Voltage,
V
CE(SAT)
(V)
0.2
0.1
0.05
I
C
/I
B
= 5V
20
10
20
10
0.2
0.02
0.5 1
2
5 10 20
50 100 200
0.01
0.2
0.5 1
2
5 10
20
50 100 200
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R206-081.E
2SC4617
TYPICAL CHARACTERISTICS
Collector-Emitter Saturation Voltage
vs. Collector Current (I)
0.5
0.2
0.1
0.05
0.02
0.01
0.2
0.5 1
2
5 10 20
50 100 200
Collector current, I
C
(mA)
T
A
= 100°C
25°C
-
55°C
NPN SILICON TRANSISTOR
Collector saturation voltage, V
CE(sat)
(V)
Collector-Emitter Saturation Voltage
vs. Collector Current (II)
0.5
Collector Saturation Voltage,
V
CE(SAT)
(V)
I
C
/I
B
= 10
I
C
/I
B
= 50
T
A
= 100°C
25°C
-55°C
0.2
0.1
0.05
0.02
0.01
0.2 0.5 1
2
5 10
20
50 100
Collector Current, I
C
(mA)
Gain Bandwidth Product vs. Emitter
Current
Collector Output Capacitance vs. Collector-Base Voltage
Emitter Input Capacitance vs. Emitter-Base Voltage
Collector Output Capacitance, C
ob
(pF)
Emitter Input Capacitance, C
ib
(pF)
Transition Frequency, f
T
(MHz)
T
A
=25°C
500 V
CE
=6V
20
10
5
C
ib
T
A
=25°C
f=1MHz
I
E
=0A
I
C
=0A
200
100
2
1
0.2
0.5
1
2
5
10
C
ob
50
-0.5 -1
-2
-5
-10 -20
-50
-100
20
50
Collector Current, I
E
(mA)
Collector to Base Voltage, V
CB
(V)
Emitter to Base Voltage, V
EB
(V)
Base Collector Time Constant (ps)
Base-Collector Time Constant
vs. Emitter Current
200
100
50
20
10
T
A
= 100°C
f=32MHZ
V
CB
=6V
-
0.2
-0.5
-1
-2
-5
-10
Emitter Current, I
E
(mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R206-081.E
2SC4617
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 5
QW-R206-081.E
京公网安备 11010802033920号
EEWORLD
