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K4Y54164UF-JCC30

Description
Rambus DRAM, 16MX16, CMOS, PBGA104
Categorystorage    storage   
File Size3MB,75 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K4Y54164UF-JCC30 Overview

Rambus DRAM, 16MX16, CMOS, PBGA104

K4Y54164UF-JCC30 Parametric

Parameter NameAttribute value
MakerSAMSUNG
package instructionTBGA,
Reach Compliance Codeunknown
ECCN codeEAR99
access modeBLOCK ORIENTED PROTOCOL
Other featuresSELF CONTAINED REFRESH
JESD-30 codeR-PBGA-B104
length14.5 mm
memory density268435456 bit
Memory IC TypeRAMBUS DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals104
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
organize16MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE
Certification statusNot Qualified
Maximum seat height1.13 mm
self refreshYES
Maximum supply voltage (Vsup)1.89 V
Minimum supply voltage (Vsup)1.71 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Terminal formBALL
Terminal pitch1.27 mm
Terminal locationBOTTOM
width14 mm
K4Y5416(/08/04)4UF
XDR DRAM
256Mbit XDR DRAM(F-die)
2M x 16(/8/4) bit x 8s Banks
Version 1.0
Jan. 2005
Version 1.0 Jan. 2005
Page -1
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