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KS24A041IS

Description
EEPROM, 4KX1, Serial, CMOS, PDSO8, SOP-8
Categorystorage    storage   
File Size123KB,16 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

KS24A041IS Overview

EEPROM, 4KX1, Serial, CMOS, PDSO8, SOP-8

KS24A041IS Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeSOIC
package instructionSOP,
Contacts8
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum clock frequency (fCLK)0.4 MHz
JESD-30 codeR-PDSO-G8
length4.92 mm
memory density4096 bit
Memory IC TypeEEPROM
memory width1
Number of functions1
Number of terminals8
word count4096 words
character code4000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize4KX1
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialSERIAL
Certification statusNot Qualified
Maximum seat height1.95 mm
Serial bus typeI2C
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)1.8 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
width3.95 mm
Maximum write cycle time (tWC)5 ms
KS24A011/021/041/081/161
1K/2K/4K/8K/16K-bit
Serial EEPROM for Low Power
Data Sheet
OVERVIEW
The KS24A011/021/041/081/161 serial EEPROM has a 1,024/2,048/4,096/8,192/16,384-bit capacity, supporting
the standard I
2
C™-bus serial interface. It is fabricated using Samsung’ most advanced CMOS technology. It has
s
been developed for low power and low voltage applications (1.8 V to 5.5 V). One of its major feature is a
hardware-based write protection circuit for the entire memory area. Hardware-based write protection is controlled
by the state of the write-protect (WP) pin. Using one-page write mode, you can load up to 16 bytes of data into
the EEPROM in a single write operation. Another significant feature of the KS24A011/021/041/081/161 is its
support for fast mode and standard mode.
FEATURES
I C-Bus Interface
Two-wire serial interface
Automatic word address increment
2
Operating Characteristics
Operating voltage
— 1.8 V to 5.5 V
Operating current
— Maximum write current: < 3 mA at 5.5 V
— Maximum read current: < 200
µA
at 5.5 V
— Maximum stand-by current: < 1
µA
at 5.5 V
Operating temperature range
— – 25°C to + 70°C (commercial)
— – 40°C to + 85°C (industrial)
Operating clock frequencies
— 100 kHz at standard mode
— 400 kHz at fast mode
Electrostatic discharge (ESD)
— 5,000 V (HBM)
— 500 V (MM)
Packages
8-pin DIP, SOP, and TSSOP
EEPROM
1K/2K/4K/8K/16K-bit
(128/256/512/1,024/2,048-byte) storage area
16-byte page buffer
Typical 3 ms write cycle time with
auto-erase function
Hardware-based write protection for the entire
EEPROM (using the WP pin)
EEPROM programming voltage generated
on chip
1,000,000 erase/write cycles
100 years data retention
1-1

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