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IDT71V016SA12BF8

Description
Standard SRAM, 64KX16, 12ns, CMOS, PBGA48, 7 X 7 MM, PLASTIC, FBGA-48
Categorystorage    storage   
File Size99KB,9 Pages
ManufacturerIDT (Integrated Device Technology)
Download Datasheet Parametric Compare View All

IDT71V016SA12BF8 Overview

Standard SRAM, 64KX16, 12ns, CMOS, PBGA48, 7 X 7 MM, PLASTIC, FBGA-48

IDT71V016SA12BF8 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIDT (Integrated Device Technology)
Parts packaging codeBGA
package instructionLFBGA, BGA48,6X8,30
Contacts48
Reach Compliance Codenot_compliant
ECCN code3A991.B.2.A
Maximum access time12 ns
I/O typeCOMMON
JESD-30 codeS-PBGA-B48
JESD-609 codee0
length7 mm
memory density1048576 bit
Memory IC TypeSTANDARD SRAM
memory width16
Humidity sensitivity level3
Number of functions1
Number of terminals48
word count65536 words
character code64000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64KX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLFBGA
Encapsulate equivalent codeBGA48,6X8,30
Package shapeSQUARE
Package formGRID ARRAY, LOW PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply3.3 V
Certification statusNot Qualified
Maximum seat height1.34 mm
Maximum standby current0.01 A
Minimum standby current3.15 V
Maximum slew rate0.15 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn63Pb37)
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature20
width7 mm
3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
Features
x
x
IDT71V016SA
Description
The IDT71V016 is a 1,048,576-bit high-speed Static RAM organized
as 64K x 16. It is fabricated using IDT’s high-perfomance, high-reliability
CMOS technology. This state-of-the-art technology, combined with inno-
vative circuit design techniques, provides a cost-effective solution for high-
speed memory needs.
The IDT71V016 has an output enable pin which operates as fast
as 5ns, with address access times as fast as 10ns. All bidirectional
inputs and outputs of the IDT71V016 are LVTTL-compatible and operation
is from a single 3.3V supply. Fully static asynchronous circuitry is used,
requiring no clocks or refresh for operation.
The IDT71V016 is packaged in a JEDEC standard 44-pin Plastic
SOJ, a 44-pin TSOP Type II, and a 48-ball plastic 7 x 7 mm FBGA.
x
x
x
x
x
x
64K x 16 advanced high-speed CMOS Static RAM
Equal access and cycle times
— Commercial: 10/12/15/20ns
— Industrial: 12/15/20ns
One Chip Select plus one Output Enable pin
Bidirectional data inputs and outputs directly
LVTTL-compatible
Low power consumption via chip deselect
Upper and Lower Byte Enable Pins
Single 3.3V power supply
Available in 44-pin Plastic SOJ, 44-pin TSOP, and
48-Ball Plastic FBGA packages
Functional Block Diagram
Output
Enable
Buffer
OE
A
0
– A
15
Address
Buffers
Row / Column
Decoders
I/O
15
Chip
Enable
Buffer
Sense
Amps
and
Write
Drivers
8
Low
Byte
I/O
Buffer
8
8
High
Byte
I/O
Buffer
8
CS
I/O
8
WE
Write
Enable
Buffer
64K x 16
Memory
Array
16
I/O
7
I/O
0
BHE
Byte
Enable
Buffers
BLE
3834 drw 01
JUNE 2002
1
©2000 Integrated Device Technology, Inc.
DSC-3834/06

IDT71V016SA12BF8 Related Products

IDT71V016SA12BF8 IDT71V016SA15BF8 IDT71V016SA20BF8 IDT71V016SA10BF8 IDT71V016SA20BFI8 IDT71V016SA15BFI8 IDT71V016SA12BFI8
Description Standard SRAM, 64KX16, 12ns, CMOS, PBGA48, 7 X 7 MM, PLASTIC, FBGA-48 Standard SRAM, 64KX16, 15ns, CMOS, PBGA48, 7 X 7 MM, PLASTIC, FBGA-48 Standard SRAM, 64KX16, 20ns, CMOS, PBGA48, 7 X 7 MM, PLASTIC, FBGA-48 Standard SRAM, 64KX16, 10ns, CMOS, PBGA48, 7 X 7 MM, PLASTIC, FBGA-48 Standard SRAM, 64KX16, 20ns, CMOS, PBGA48, 7 X 7 MM, PLASTIC, FBGA-48 Standard SRAM, 64KX16, 15ns, CMOS, PBGA48, 7 X 7 MM, PLASTIC, FBGA-48 Standard SRAM, 64KX16, 12ns, CMOS, PBGA48, 7 X 7 MM, PLASTIC, FBGA-48
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Parts packaging code BGA BGA BGA BGA BGA BGA BGA
package instruction LFBGA, BGA48,6X8,30 LFBGA, BGA48,6X8,30 LFBGA, BGA48,6X8,30 LFBGA, BGA48,6X8,30 LFBGA, BGA48,6X8,30 LFBGA, BGA48,6X8,30 LFBGA, BGA48,6X8,30
Contacts 48 48 48 48 48 48 48
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Maximum access time 12 ns 15 ns 20 ns 10 ns 20 ns 15 ns 12 ns
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code S-PBGA-B48 S-PBGA-B48 S-PBGA-B48 S-PBGA-B48 S-PBGA-B48 S-PBGA-B48 S-PBGA-B48
JESD-609 code e0 e0 e0 e0 e0 e0 e0
length 7 mm 7 mm 7 mm 7 mm 7 mm 7 mm 7 mm
memory density 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 16 16 16 16 16 16 16
Humidity sensitivity level 3 3 3 3 3 3 3
Number of functions 1 1 1 1 1 1 1
Number of terminals 48 48 48 48 48 48 48
word count 65536 words 65536 words 65536 words 65536 words 65536 words 65536 words 65536 words
character code 64000 64000 64000 64000 64000 64000 64000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 85 °C 85 °C 85 °C
organize 64KX16 64KX16 64KX16 64KX16 64KX16 64KX16 64KX16
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code LFBGA LFBGA LFBGA LFBGA LFBGA LFBGA LFBGA
Encapsulate equivalent code BGA48,6X8,30 BGA48,6X8,30 BGA48,6X8,30 BGA48,6X8,30 BGA48,6X8,30 BGA48,6X8,30 BGA48,6X8,30
Package shape SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE
Package form GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 225 225 225 225 225 225 225
power supply 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.34 mm 1.34 mm 1.34 mm 1.34 mm 1.34 mm 1.34 mm 1.34 mm
Maximum standby current 0.01 A 0.01 A 0.01 A 0.01 A 0.01 A 0.01 A 0.01 A
Minimum standby current 3.15 V 3.15 V 3.15 V 3.15 V 3.15 V 3.15 V 3.15 V
Maximum slew rate 0.15 mA 0.13 mA 0.12 mA 0.16 mA 0.12 mA 0.13 mA 0.16 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V 3.15 V 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal surface Tin/Lead (Sn63Pb37) Tin/Lead (Sn63Pb37) Tin/Lead (Sn63Pb37) Tin/Lead (Sn63Pb37) Tin/Lead (Sn63Pb37) Tin/Lead (Sn63Pb37) Tin/Lead (Sn63Pb37)
Terminal form BALL BALL BALL BALL BALL BALL BALL
Terminal pitch 0.75 mm 0.75 mm 0.75 mm 0.75 mm 0.75 mm 0.75 mm 0.75 mm
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature 20 20 20 20 20 20 20
width 7 mm 7 mm 7 mm 7 mm 7 mm 7 mm 7 mm
Maker IDT (Integrated Device Technology) IDT (Integrated Device Technology) - IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
Base Number Matches - 1 1 1 1 1 -
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