Rectifier Diode, 1 Phase, 2 Element, 300A, 200V V(RRM), Silicon,
| Parameter Name | Attribute value |
| Maker | Microsemi |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| application | POWER |
| Shell connection | ANODE |
| Configuration | COMMON ANODE, 2 ELEMENTS |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.25 V |
| JESD-30 code | R-XUFM-X1 |
| JESD-609 code | e0 |
| Maximum non-repetitive peak forward current | 5500 A |
| Number of components | 2 |
| Phase | 1 |
| Number of terminals | 1 |
| Maximum operating temperature | 175 °C |
| Minimum operating temperature | -40 °C |
| Maximum output current | 300 A |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 200 V |
| Maximum reverse current | 250 µA |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | UNSPECIFIED |
| Terminal location | UPPER |
| SDM30002A | SDM30010A | SDM30012A | SDM30004A | SDM30006A | SDM30008A | |
|---|---|---|---|---|---|---|
| Description | Rectifier Diode, 1 Phase, 2 Element, 300A, 200V V(RRM), Silicon, | Rectifier Diode, 1 Phase, 2 Element, 300A, 1000V V(RRM), Silicon, | Rectifier Diode, 1 Phase, 2 Element, 300A, 1200V V(RRM), Silicon, | Rectifier Diode, 1 Phase, 2 Element, 300A, 400V V(RRM), Silicon, | Rectifier Diode, 1 Phase, 2 Element, 300A, 600V V(RRM), Silicon, | Rectifier Diode, 1 Phase, 2 Element, 300A, 800V V(RRM), Silicon, |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| application | POWER | POWER | POWER | POWER | POWER | POWER |
| Shell connection | ANODE | ANODE | ANODE | ANODE | ANODE | ANODE |
| Configuration | COMMON ANODE, 2 ELEMENTS | COMMON ANODE, 2 ELEMENTS | COMMON ANODE, 2 ELEMENTS | COMMON ANODE, 2 ELEMENTS | COMMON ANODE, 2 ELEMENTS | COMMON ANODE, 2 ELEMENTS |
| Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.25 V | 1.25 V | 1.25 V | 1.25 V | 1.25 V | 1.25 V |
| JESD-30 code | R-XUFM-X1 | R-XUFM-X1 | R-XUFM-X1 | R-XUFM-X1 | R-XUFM-X1 | R-XUFM-X1 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 |
| Maximum non-repetitive peak forward current | 5500 A | 5500 A | 5500 A | 5500 A | 5500 A | 5500 A |
| Number of components | 2 | 2 | 2 | 2 | 2 | 2 |
| Phase | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 1 | 1 | 1 | 1 | 1 | 1 |
| Maximum operating temperature | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
| Minimum operating temperature | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
| Maximum output current | 300 A | 300 A | 300 A | 300 A | 300 A | 300 A |
| Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum repetitive peak reverse voltage | 200 V | 1000 V | 1200 V | 400 V | 600 V | 800 V |
| Maximum reverse current | 250 µA | 250 µA | 250 µA | 250 µA | 250 µA | 250 µA |
| surface mount | NO | NO | NO | NO | NO | NO |
| Terminal surface | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
| Terminal form | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| Terminal location | UPPER | UPPER | UPPER | UPPER | UPPER | UPPER |
| Maker | Microsemi | - | - | Microsemi | Microsemi | Microsemi |