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BC635, BC637, BC639,
BC639−16
High Current Transistors
NPN Silicon
Features
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COLLECTOR
2
3
BASE
Symbol
V
CEO
BC635
BC637
BC639
Collector - Base Voltage
BC635
BC637
BC639
Emitter - Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
P
D
P
D
T
J
, T
stg
V
CBO
45
60
80
5.0
1.0
625
5.0
800
12
−55 to +150
Vdc
Adc
mW
mW/°C
mW
mW/°C
°C
1
2
3
45
60
80
Vdc
Value
Unit
Vdc
1
EMITTER
•
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage
TO−92
CASE 29
STYLE 14
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
BC
63x
AYWW
G
G
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
= Device Code
x = 5, 7, or 9
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
BC63x
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2005
1
September, 2005 − Rev. 5
Publication Order Number:
BC635/D
BC635, BC637, BC639, BC639−16
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage (Note 1)
(I
C
= 10
mAdc,
I
B
= 0)
V
(BR)CEO
BC635
BC637
BC639
V
(BR)CES
BC639−16
V
(BR)CBO
BC635
BC637
BC639
V
(BR)EBO
I
CBO
−
−
−
−
100
10
nAdc
mAdc
45
60
80
5.0
−
−
−
−
−
−
−
−
Vdc
120
−
−
Vdc
45
60
80
−
−
−
−
−
−
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
Collector − Emitter Zero−Gate Breakdown Voltage(Note 1)
(I
C
= 100
mAdc,
I
B
= 0)
Collector − Base Breakdown Voltage
(I
C
= 100
mAdc,
I
E
= 0)
Emitter − Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
(V
CB
= 30 Vdc, I
E
= 0, T
A
= 125°C)
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= 5.0 mAdc, V
CE
= 2.0 Vdc)
(I
C
= 150 mAdc, V
CE
= 2.0 Vdc)
h
FE
BC635
BC637
BC639
BC639−16ZLT1
V
CE(sat)
V
BE(on)
25
40
40
40
100
25
−
−
−
−
−
−
−
−
−
−
−
250
160
160
250
−
0.5
1.0
−
(I
C
= 500 mA, V
CE
= 2.0 V)
Collector − Emitter Saturation Voltage
(I
C
= 500 mAdc, I
B
= 50 mAdc)
Base − Emitter On Voltage
(I
C
= 500 mAdc, V
CE
= 2.0 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product
(I
C
= 50 mAdc, V
CE
= 2.0 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle 2.0%.
f
T
C
ob
C
ib
Vdc
Vdc
−
−
−
200
7.0
50
−
−
−
MHz
pF
pF
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2
BC635, BC637, BC639, BC639−16
1000
500
IC, COLLECTOR CURRENT (mA)
200
100
50
20
10
5
2
1
1
P
D
T
A
25°C
P
D
T
C
25°C
BC635
BC637
BC639
100
P
D
T
A
25°C
P
D
T
C
25°C
SOA = 1S
hFE, DC CURRENT GAIN
200
500
V
CE
= 2 V
100
50
2
3 4 5
7 10
20 30 40 50 70
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
20
1
3
5
10
30 50 100
I
C
, COLLECTOR CURRENT (mA)
300 500
1000
Figure 1. Active Region Safe Operating Area
BANDWIDTH PRODUCT (MHz)
Figure 2. DC Current Gain
500
300
V, VOLTAGE (VOLTS)
1
0.8
0.6
0.4
0.2
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 2 V
100
V
CE
= 2 V
f T, CURRENT−GAIN
50
20
1
10
100
I
C
, COLLECTOR CURRENT (mA)
1000
0
1
10
100
I
C
, COLLECTOR CURRENT (mA)
1000
Figure 3. Current−Gain — Bandwidth Product
Figure 4. “Saturation” and “On” Voltages
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
−0.2
−1.0
V
CE
= 2 VOLTS
DT
= 0°C to +100°C
q
V
for V
BE
−1.6
−2.2
1
3
5
10
30 50
100
I
C
, COLLECTOR CURRENT (mA)
300 500
1000
Figure 5. Temperature Coefficients
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3
BC635, BC637, BC639, BC639−16
DEVICE ORDERING INFORMATION
Device
BC635RL1
BC635RL1G
BC635ZL1
BC635ZL1G
BC637
BC637G
BC639
BC639G
BC639RL1
BC639RL1G
BC639ZL1
BC639ZL1G
BC639−16ZL1
BC639−16ZL1G
Package
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
Shipping
†
2000 / Tape & Reel
2000 / Tape & Reel
2000 / Tape & Reel
2000 / Tape & Reel
5000 Units / Box
5000 Units / Box
5000 Units / Box
5000 Units / Box
2000 / Tape & Reel
2000 / Tape & Reel
2000 / Ammo Box
2000 / Ammo Box
2000 / Ammo Box
2000 / Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
Embedded System
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