2SK2940(L), 2SK2940(S)
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1054-0400
(Previous: ADE-208-563B)
Rev.4.00
Sep 07, 2005
Features
•
Low on-resistance
R
DS
=0.010
Ω
typ.
•
High speed switching
•
4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
4
4
G
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
D
1. Gate
2. Drain
3. Source
4. Drain
1
1
2
3
2
3
S
Rev.4.00 Sep 07, 2005 page 1 of 8
2SK2940(L),2SK2940(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Note: 1. PW
≤
10µs, duty cycle
≤
1 %
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
≥
50
Ω
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note3
E
AR Note3
Pch
Note2
Tch
Tstg
Ratings
60
±20
45
180
45
45
173
75
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°
C
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Note:
4. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
60
±20
—
—
1.5
—
—
24
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.010
0.015
40
2200
1050
320
25
200
320
240
0.95
60
Max
—
—
±10
10
2.5
0.013
0.025
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±16
V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10V
I
D
= 20 A, V
GS
= 10V
Note4
I
D
= 20 A, V
GS
= 4V
Note4
I
D
= 20 A, V
DS
= 10V
Note4
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 20 A, V
GS
= 10 V,
R
L
= 1.5
Ω
I
F
= 45 A, V
GS
= 0
I
F
= 45 A, V
GS
= 0
di
F
/ dt =50 A/
µs
Rev.4.00 Sep 07, 2005 page 2 of 8
2SK2940(L),2SK2940(S)
Main Characteristics
Power vs. Temperature Derating
100
1000
300
µ
s
0
µ
1m
s
s
10
m
s(
1s
Maximum Safe Operation Area
Channel Dissipation Pch (W)
10
Drain Current I
D
(A)
75
100
30
10
3
1
0.3
PW
DC
=
50
Op
10
25
ho
t)
Operation in
(T
c=
this area is
25
limited by R
DS(on)
°C
)
er
ati
on
0
50
100
150
200
Ta = 25°C
0.1
0.1 0.3
1
3
10
30
100
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
50
10 V 6 V
5V
4V
Pulse Test
50
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
30
Drain Current I
D
(A)
40
40
3.5 V
30
20
20
25°C
Tc = 75°C
10
–25°C
1
2
3
4
5
10
3V
V
GS
= 2.5 V
0
2
4
6
8
10
0
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
100
Pulse Test
50
20
10
5
Drain to Source Saturation Voltage
V
DS (on)
(V)
0.5
Pulse Test
0.4
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
0.3
I
D
= 20 A
10 A
5A
0
4
8
12
16
20
V
GS
= 4 V
10 V
0.2
0.1
2
1
1
2
5
10
20
50
100
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.4.00 Sep 07, 2005 page 3 of 8
2SK2940(L),2SK2940(S)
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
y
fs
(S)
40
Pulse Test
32
I
D
= 20 A
V
GS
= 4 V
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Forward Transfer Admittance
vs. Drain Current
500
200
100
50
20
10
5
2
1
0.5
0.1
0.3
1
3
10
30
100
75°C
25°C
Tc = –25°C
V
DS
= 10 V
Pulse Test
10 A
5A
24
16
5, 10, 20 A
8
10 V
0
–40
0
40
80
120
160
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
100
10000
5000
Drain Current I
D
(A)
Typical Capacitance
vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
Capacitance C (pF)
50
2000
1000
Ciss
Coss
500
200
100
50
20
di / dt = 50 A /
µs
V
GS
= 0, Ta = 25°C
0.3
1
3
10
30
100
Crss
V
GS
= 0
f = 1 MHz
10
0.1
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
I
D
= 45 A
V
GS
V
DS
V
DD
= 10 V
25 V
50 V
Switching Characteristics
Gate to Source Voltage V
GS
(V)
20
1000
500
200
100
50
td(on)
td(off)
tf
tr
100
80
16
60
12
40
8
20
V
DD
= 50 V
25 V
10 V
4
0
200
Switching Time t (ns)
20
0
40
80
120
160
10
0.1 0.2 0.5 1
V
GS
= 10 V,
V
DD
= 30 V
PW = 10
µs,
duty < 1 %
2
5 10 20
50 100
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.4.00 Sep 07, 2005 page 4 of 8
2SK2940(L),2SK2940(S)
Reverse Drain Current vs.
Source to Drain Voltage
Maximum Avalanche Energy vs.
Channel Temperature Derating
(A)
50
Repetitive Avalanche Energy E
AR
(mJ)
200
I
AP
= 45 A
V
DD
= 25 V
duty < 0.1 %
Rg > 50
Ω
Reverse Drain Current I
DR
40
160
30
10 V
5V
V
GS
= 0, –5 V
120
20
80
10
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
40
0
25
50
75
100
125
150
Source to Drain Voltage
V
SD
(V)
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
θ
ch – c(t) =
γ
s (t)
• θ
ch – c
θ
ch – c = 1.67°C/W, Tc = 25°C
PDM
PW
T
0.03
0.02
1
lse
0.0
t pu
ho
1s
D=
PW
T
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
Pulse Width
Avalanche Test Circuit
V
DS
Monitor
L
I
AP
Monitor
PW (S)
Avalanche Waveform
E
AR
=
1
2
•
L
•
I
AP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
Rg
D. U. T
V
DD
V
DS
I
D
Vin
15 V
50
Ω
0
V
DD
Rev.4.00 Sep 07, 2005 page 5 of 8
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