2SK2940(L),2SK2940(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-563B (Z)
3rd. Edition
Jul. 1998
Features
•
Low on-resistance
R
DS
=0.010
Ω
typ.
•
High speed switching
•
4V gate drive device can be driven from 5V source
Outline
LDPAK
4
4
D
1
G
1
2
3
2
3
S
1. Gate
2. Drain
3. Source
4. Drain
2SK2940(L),2SK2940(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Note:
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note3
E
AR Note3
Pch
Note2
Tch
Tstg
Ratings
60
±20
45
180
45
45
173
75
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
1. PW
≤
10µs, duty cycle
≤
1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg
≥
50Ω
2
2SK2940(L),2SK2940(S)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
60
±20
—
—
1.5
—
—
24
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.010
0.015
40
2200
1050
320
25
200
320
240
0.95
60
Max
—
—
±10
10
2.5
0.013
0.025
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
F
= 45A, V
GS
= 0
I
F
= 45A, V
GS
= 0
diF/ dt =50A/µs
Test Conditions
I
D
= 10mA, V
GS
= 0
I
G
=
±100µA,
V
DS
= 0
V
GS
=
±16V,
V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1mA, V
DS
= 10V
I
D
= 20A, V
GS
= 10V
Note4
I
D
= 20A, V
GS
= 4V
Note4
I
D
= 20A, V
DS
= 10V
Note4
V
DS
= 10V
V
GS
= 0
f = 1MHz
I
D
= 20A, V
GS
= 10V
R
L
= 1.5Ω
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Note:
4. Pulse test
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
3
2SK2940(L),2SK2940(S)
Main Characteristics
Power vs. Temperature Derating
100
1000
300
Pch (W)
I
D
(A)
Maximum Safe Operation Area
10
75
100
30
10
3
1
0.3
DC
PW
=1
Channel Dissipation
Drain Current
50
25
t)
Operation in
(T
c=
this area is
25
°C
limited by R
DS(on)
)
Op
era
t
0m
µs
0µ
1m
s
s
10
s(
1s
ho
ion
0
50
100
150
200
0.1
0.1
Ta = 25 °C
3
0.3
1
10
Drain to Source Voltage V
30
(V)
DS
100
Case Temperature Tc (°C)
Typical Output Characteristics
50
10 V 6 V
5V
40
I
D
(A)
Typical Transfer Characteristics
50
Pulse Test
I
D
(A)
4V
V
DS
= 10 V
Pulse Test
40
30
3.5 V
30
Drain Current
20
Drain Current
20
25°C
Tc = 75°C
10
–25°C
10
3V
V
GS
= 2.5 V
0
2
4
6
Drain to Source Voltage V
8
(V)
DS
10
0
1
2
3
Gate to Source Voltage V
4
(V)
GS
5
4
2SK2940(L),2SK2940(S)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
10
5
Drain to Source Saturation Voltage
V
DS(on)
(V)
Pulse Test
0.4
Drain to Source On State Resistance
R
DS(on)
(m
W
)
0.5
0.3
I
D
= 20 A
V
GS
= 4 V
10 V
0.2
0.1
10 A
5A
2
1
1
2
5
10
20
50
Drain Current I
D
(A)
100
0
12
4
8
Gate to Source Voltage
16
20
V
GS
(V)
Static Drain to Source on State Resistance
R
DS(on)
(m
W
)
Forward Transfer Admittance |y
fs
| (S)
Static Drain to Source on State Resistance
vs. Temperature
40
Pulse Test
32
I
D
= 20 A 10 A
V
GS
= 4 V
16
5, 10, 20 A
8
10 V
0
–40
0
40
80
120
160
Case Temperature Tc (°C)
5A
Forward Transfer Admittance vs.
Drain Current
500
200
100
50
20
10
5
2
1
0.5
0.1
0.3
1
3
10
30
Drain Current I
D
(A)
100
75 °C
25 °C
Tc = –25 °C
V
DS
= 10 V
Pulse Test
24
5
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